{ "cells": [ { "cell_type": "markdown", "metadata": {}, "source": [ "### Import the Libraries" ] }, { "cell_type": "code", "execution_count": 2, "metadata": {}, "outputs": [], "source": [ "#%reload_ext autoreload\n", "#%autoreload \n", "from requests import Session\n", "import sys\n", "import pandas as pd\n", "from tqdm import tqdm\n", "from iorbit_client import IOrbitClient\n", "\n", "import logging\n", "logging.basicConfig(level=logging.INFO)\n", "import json\n", "from langchain_community.chat_models import ChatOpenAI\n", "from langchain.prompts import PromptTemplate\n", "from langchain.chains import LLMChain\n", "from dotenv import load_dotenv\n", "import os\n", "import tiktoken\n", "import re\n", "from collections import defaultdict" ] }, { "cell_type": "code", "execution_count": 3, "metadata": {}, "outputs": [], "source": [ "# Load the .env file\n", "load_dotenv()\n", "\n", "# Access the API keys\n", "openai_api_key = os.getenv('OPENAI_API_KEY')" ] }, { "cell_type": "markdown", "metadata": {}, "source": [ "### Loading the feature list and the patents for feature table creation" ] }, { "cell_type": "code", "execution_count": 4, "metadata": {}, "outputs": [], "source": [ "# Load the separate JSON files\n", "with open(\"C:/Work/Qatent/Codes/TestCodes/FeatureTable/FeatureTable/IVS/Sample - Search Report 006 - IVS_006_features.json\", \"r\") as f:\n", " features = json.load(f)\n", "\n", "with open('C:/Work/Qatent/Codes/TestCodes/FeatureTable/FeatureTable/IVS6.json', \"r\") as f:\n", " concurIP_patents = json.load(f)" ] }, { "cell_type": "code", "execution_count": 5, "metadata": {}, "outputs": [ { "name": "stdout", "output_type": "stream", "text": [ "\n", "\n" ] } ], "source": [ "print(type(features))\n", "print(type(concurIP_patents))" ] }, { "cell_type": "code", "execution_count": 15, "metadata": {}, "outputs": [ { "data": { "text/plain": [ "{'F1': 'A porous plug for use in a substrate support,',\n", " 'F2': 'comprising: a porous central passageway; and',\n", " 'F3': 'a solid outer shell bonded to and surrounding the porous central passageway such that there is no continuous gap between the porous central passageway and the solid outer shell along an entire length of the porous plug',\n", " 'F4': 'wherein the solid outer shell includes sealing surfaces disposed on ends of the solid outer shell to facilitate forming a seal along the sealing surface and surrounding the porous central passageway.'}" ] }, "execution_count": 15, "metadata": {}, "output_type": "execute_result" } ], "source": [ "features" ] }, { "cell_type": "code", "execution_count": null, "metadata": {}, "outputs": [], "source": [ "#The concurIP_patents file is a dict of dicts\n", "\n", "\"\"\"\n", "\n", "{\n", " \"2018WO-CN100373\": {\n", " \"Application_Number\": \"2018WO-CN100373\",\n", " \"Content\": {\n", " \"title\": \"Exhaust after-treatment device\",\n", " \"pa01\": \"The invention discloses .................\",\n", " \"c-en-0001\": \"An exhaust aftertreatment device comprising a ....\",\n", " \"c-en-0002\": \"The exhaust aftertreatment device of claim 1, wherein: the exhaust aftertreatment device is U-shaped.\",\n", " \"c-en-0003\": \"The e\n", " .\n", " .\n", " .\n", " \"p0048\": \"It should be noted that the orientat..................\"\n", " }\n", " },\n", "\n", " \"2020WO-CN117105\": {\n", " \"Application_Number\": \"2020WO-CN117105\",\n", " \"Content\": {\n", " \"title\": \"Tail gas after-treatment shell and tail gas after-treatment sealing package\",\n", " \"pa01\": \"The invention discloses a................\",\n", " \"c-en-0001\": \"The utility model provides a ............................\",\n", " \"c-en-0002\": \"The exhaust aftertreatment housing of claim 1, wherein: .........\",\n", "\n", " \"p0107\": \"Referring to.............................\",\n", " \"p0108\": \"Continuing to .......................\",\n", " \"p0109\": \"Continuing to refer .............................\"\n", " }\n", " }\n", "}\n", "\n", "\n", "\"\"\"" ] }, { "cell_type": "code", "execution_count": 6, "metadata": {}, "outputs": [ { "name": "stdout", "output_type": "stream", "text": [ "Feature List as a string:\n", "F1: A porous plug for use in a substrate support,\n", "F2: comprising: a porous central passageway; and\n", "F3: a solid outer shell bonded to and surrounding the porous central passageway such that there is no continuous gap between the porous central passageway and the solid outer shell along an entire length of the porous plug\n", "F4: wherein the solid outer shell includes sealing surfaces disposed on ends of the solid outer shell to facilitate forming a seal along the sealing surface and surrounding the porous central passageway.\n", "\n", "Features Text for Orbit search:\n", "A porous plug for use in a substrate support,\n", "comprising: a porous central passageway; and\n", "a solid outer shell bonded to and surrounding the porous central passageway such that there is no continuous gap between the porous central passageway and the solid outer shell along an entire length of the porous plug\n", "wherein the solid outer shell includes sealing surfaces disposed on ends of the solid outer shell to facilitate forming a seal along the sealing surface and surrounding the porous central passageway.\n" ] } ], "source": [ "# Convert the feature list to a readable format for the model, assuming it’s a dictionary\n", "features_text = \"\\n\".join([f\"{feature_id}: {desc}\" for feature_id, desc in features.items()])\n", "# Remove curved brackets with numbers in them\n", "features_text = re.sub(r\"\\(\\d+\\)\", \"\", features_text)\n", "print(f'Feature List as a string:\\n{features_text}')\n", "\n", "\n", "# Create a new variable for just the feature descriptions for Orbit Search\n", "features_only_text = \"\\n\".join([f\"{desc}\" for desc in features.values()])\n", "# Remove curved brackets with numbers in them\n", "features_only_text = re.sub(r\"\\(\\d+\\)\", \"\", features_only_text)\n", "print(f'\\nFeatures Text for Orbit search:\\n{features_only_text}')" ] }, { "cell_type": "markdown", "metadata": {}, "source": [ "#### Logging into orbit (Optional)" ] }, { "cell_type": "code", "execution_count": 8, "metadata": {}, "outputs": [ { "data": { "text/plain": [ "{'ticket': 'b54acc8e-22b4-4b26-9e30-8003e186d5a5',\n", " 'accountErpGuid': '0F99E464-EC39-476D-BBDA-8E2B651369DB',\n", " 'status': 'ok',\n", " 'message': '',\n", " 'email': 'anshul.mahawar@concurip.com',\n", " 'firstname': '',\n", " 'lastname': '',\n", " 'role': 'user',\n", " 'shard': 'betaqs.orbit.com',\n", " 'orbitServices': {'version': '2.0.0',\n", " 'uuid': '4a567ef9-da0f-4e44-9dcb-d8932151596a154235944821712FR-DC1',\n", " 'entity_id': '',\n", " 'firstname': '',\n", " 'lastname': '',\n", " 'email': 'anshul.mahawar@concurip.com',\n", " 'erp_guuid': '0F99E464-EC39-476D-BBDA-8E2B651369DB',\n", " 'yoomap': [],\n", " 'invention_url': '',\n", " 'services': [{'name': 'X_WKF_RW'},\n", " {'name': 'X_GRAPHS'},\n", " {'name': 'X_EXPORTS'},\n", " {'name': 'X_SEARCH_RW'}]},\n", " 'yoomap': []}" ] }, "execution_count": 8, "metadata": {}, "output_type": "execute_result" } ], "source": [ "import getpass\n", "email = 'anshul.mahawar@concurip.com'\n", "if not 'password' in globals():\n", " password = getpass.getpass(\"Enter your password: \")\n", "\n", "c = IOrbitClient(email, password, host='betaqs.orbit.com', database='FAMPAT')\n", "c.login()" ] }, { "cell_type": "code", "execution_count": 9, "metadata": {}, "outputs": [ { "name": "stderr", "output_type": "stream", "text": [ "INFO:root:semantic searching https://betaqs.orbit.com/rest/iorbit/user/semantic/FAMPAT;ticket=b54acc8e-22b4-4b26-9e30-8003e186d5a5 with {'range': '1-5', 'text': 'A porous plug for use in a substrate support,\\ncomprising: a porous central passageway; and\\na solid outer shell bonded to and surrounding the porous central passageway such that there is no continuous gap between the porous central passageway and the solid outer shell along an entire length of the porous plug\\nwherein the solid outer shell includes sealing surfaces disposed on ends of the solid outer shell to facilitate forming a seal along the sealing surface and surrounding the porous central passageway.', 'fields': 'TI AB ECLM DESC'}\n" ] }, { "data": { "text/html": [ "
\n", "\n", "\n", " \n", " \n", " \n", " \n", " \n", " \n", " \n", " \n", " \n", " \n", " \n", " \n", " \n", " \n", " \n", " \n", " \n", " \n", " \n", " \n", " \n", " \n", " \n", " \n", " \n", " \n", " \n", " \n", " \n", " \n", " \n", " \n", " \n", " \n", " \n", " \n", " \n", " \n", " \n", " \n", " \n", " \n", " \n", " \n", " \n", " \n", " \n", " \n", " \n", " \n", " \n", " \n", " \n", " \n", " \n", " \n", " \n", " \n", " \n", " \n", " \n", " \n", " \n", " \n", "
ABTIRELEVANCE_SCOREIDREPDESCECLM
0(EP4441780)<br/>Porous plugs for gas delivery ...Porous plug for electrostatic chuck gas delivery100.0EP4441780_A1EP4441780_A1<p><h1>FIELD</h1></p><p><span class=\"paragraph...(WO2023/096756)<br/><p><heading>Claims: </head...
1(EP0412229)<br/>A rotary valve assembly having...Thermally stable sealing device for a butterfl...93.0EP-412229_A1EP-412229_A1<p><h1>BACKGROUND OF THE INVENTION</h1></p><p>...(EP0412229)<br/><p>1. Temperature-resistant bi...
2(DE102019112957)<br/>A sealing unit 1 comprise...Annular seal for spark plug or the like93.0DE102019112957_A1DE102019112957_A1<p><heading level=\"1\">Field of technology</hea...(GB2574032)<br/><p>1. A seal (1) comprising an...
3(US20040200715)<br/>The present invention feat...Dynamic flange seal and sealing system93.0US20040200715_A1US20040200715_A1<p><h1 align=\"LEFT\">RELATED APPLICATIONS </h1>...(US20040200715)<br/><p><h1 align=\"LEFT\">What i...
4(WO2018/079632)<br/>Provided are a seal struct...Seal structure, sealing method, and coupling e...93.0WO201879632_A1WO201879632_A1<p><h1>CROSS REFERENCE TO RELATED APPLICATIONS...(US20190293178)<br/><p><b>1</b>. A seal struct...
\n", "
" ], "text/plain": [ " AB \\\n", "0 (EP4441780)
Porous plugs for gas delivery ... \n", "1 (EP0412229)
A rotary valve assembly having... \n", "2 (DE102019112957)
A sealing unit 1 comprise... \n", "3 (US20040200715)
The present invention feat... \n", "4 (WO2018/079632)
Provided are a seal struct... \n", "\n", " TI RELEVANCE_SCORE \\\n", "0 Porous plug for electrostatic chuck gas delivery 100.0 \n", "1 Thermally stable sealing device for a butterfl... 93.0 \n", "2 Annular seal for spark plug or the like 93.0 \n", "3 Dynamic flange seal and sealing system 93.0 \n", "4 Seal structure, sealing method, and coupling e... 93.0 \n", "\n", " ID REP \\\n", "0 EP4441780_A1 EP4441780_A1 \n", "1 EP-412229_A1 EP-412229_A1 \n", "2 DE102019112957_A1 DE102019112957_A1 \n", "3 US20040200715_A1 US20040200715_A1 \n", "4 WO201879632_A1 WO201879632_A1 \n", "\n", " DESC \\\n", "0

FIELD

BACKGROUND OF THE INVENTION

... \n", "2

Field of technology

RELATED APPLICATIONS

... \n", "4

CROSS REFERENCE TO RELATED APPLICATIONS... \n", "\n", " ECLM \n", "0 (WO2023/096756)

Claims:

1. Temperature-resistant bi... \n", "2 (GB2574032)

1. A seal (1) comprising an... \n", "3 (US20040200715)

What i... \n", "4 (US20190293178)

1. A seal struct... " ] }, "execution_count": 9, "metadata": {}, "output_type": "execute_result" } ], "source": [ "# Step 6: Use extracted features as search query and fetch 7 patents from Orbit API\n", "api_response = c.semantic_search(features_only_text, ['TI', 'AB', 'ECLM', 'DESC'], count=5)\n", "\n", "# Convert the response to a DataFrame for easier processing\n", "df_orbit = pd.DataFrame(api_response['documents'])\n", "df_orbit\n" ] }, { "cell_type": "code", "execution_count": 10, "metadata": {}, "outputs": [ { "data": { "text/html": [ "

\n", "\n", "\n", " \n", " \n", " \n", " \n", " \n", " \n", " \n", " \n", " \n", " \n", " \n", " \n", " \n", " \n", " \n", " \n", " \n", " \n", " \n", " \n", " \n", " \n", " \n", " \n", " \n", " \n", " \n", " \n", " \n", " \n", " \n", " \n", " \n", " \n", " \n", " \n", " \n", " \n", " \n", " \n", " \n", " \n", " \n", " \n", " \n", " \n", " \n", " \n", " \n", " \n", " \n", " \n", "
IDTIABECLMDESC
0EP4441780_A1Porous plug for electrostatic chuck gas delivery(EP4441780)<br/>Porous plugs for gas delivery ...(WO2023/096756)<br/><p><heading>Claims: </head...<p><h1>FIELD</h1></p><p><span class=\"paragraph...
1EP-412229_A1Thermally stable sealing device for a butterfl...(EP0412229)<br/>A rotary valve assembly having...(EP0412229)<br/><p>1. Temperature-resistant bi...<p><h1>BACKGROUND OF THE INVENTION</h1></p><p>...
2DE102019112957_A1Annular seal for spark plug or the like(DE102019112957)<br/>A sealing unit 1 comprise...(GB2574032)<br/><p>1. A seal (1) comprising an...<p><heading level=\"1\">Field of technology</hea...
3US20040200715_A1Dynamic flange seal and sealing system(US20040200715)<br/>The present invention feat...(US20040200715)<br/><p><h1 align=\"LEFT\">What i...<p><h1 align=\"LEFT\">RELATED APPLICATIONS </h1>...
4WO201879632_A1Seal structure, sealing method, and coupling e...(WO2018/079632)<br/>Provided are a seal struct...(US20190293178)<br/><p><b>1</b>. A seal struct...<p><h1>CROSS REFERENCE TO RELATED APPLICATIONS...
\n", "
" ], "text/plain": [ " ID TI \\\n", "0 EP4441780_A1 Porous plug for electrostatic chuck gas delivery \n", "1 EP-412229_A1 Thermally stable sealing device for a butterfl... \n", "2 DE102019112957_A1 Annular seal for spark plug or the like \n", "3 US20040200715_A1 Dynamic flange seal and sealing system \n", "4 WO201879632_A1 Seal structure, sealing method, and coupling e... \n", "\n", " AB \\\n", "0 (EP4441780)
Porous plugs for gas delivery ... \n", "1 (EP0412229)
A rotary valve assembly having... \n", "2 (DE102019112957)
A sealing unit 1 comprise... \n", "3 (US20040200715)
The present invention feat... \n", "4 (WO2018/079632)
Provided are a seal struct... \n", "\n", " ECLM \\\n", "0 (WO2023/096756)

Claims:

1. Temperature-resistant bi... \n", "2 (GB2574032)

1. A seal (1) comprising an... \n", "3 (US20040200715)

What i... \n", "4 (US20190293178)

1. A seal struct... \n", "\n", " DESC \n", "0

FIELD

BACKGROUND OF THE INVENTION

... \n", "2

Field of technology

RELATED APPLICATIONS

... \n", "4

CROSS REFERENCE TO RELATED APPLICATIONS... " ] }, "execution_count": 10, "metadata": {}, "output_type": "execute_result" } ], "source": [ "df = df_orbit[['ID' ,'TI', 'AB', 'ECLM', 'DESC']]\n", "df" ] }, { "cell_type": "markdown", "metadata": {}, "source": [ "#### Clean the orbit data " ] }, { "cell_type": "code", "execution_count": 12, "metadata": {}, "outputs": [ { "name": "stderr", "output_type": "stream", "text": [ "C:\\Users\\ayush.tiwari\\AppData\\Local\\Temp\\ipykernel_12872\\2467406529.py:65: SettingWithCopyWarning: \n", "A value is trying to be set on a copy of a slice from a DataFrame.\n", "Try using .loc[row_indexer,col_indexer] = value instead\n", "\n", "See the caveats in the documentation: https://pandas.pydata.org/pandas-docs/stable/user_guide/indexing.html#returning-a-view-versus-a-copy\n", " df['AB'] = df['AB'].apply(clean_abstract)\n", "C:\\Users\\ayush.tiwari\\AppData\\Local\\Temp\\ipykernel_12872\\2467406529.py:66: SettingWithCopyWarning: \n", "A value is trying to be set on a copy of a slice from a DataFrame.\n", "Try using .loc[row_indexer,col_indexer] = value instead\n", "\n", "See the caveats in the documentation: https://pandas.pydata.org/pandas-docs/stable/user_guide/indexing.html#returning-a-view-versus-a-copy\n", " df['ECLM'] = df['ECLM'].apply(clean_claim_text)\n", "C:\\Users\\ayush.tiwari\\AppData\\Local\\Temp\\ipykernel_12872\\2467406529.py:67: SettingWithCopyWarning: \n", "A value is trying to be set on a copy of a slice from a DataFrame.\n", "Try using .loc[row_indexer,col_indexer] = value instead\n", "\n", "See the caveats in the documentation: https://pandas.pydata.org/pandas-docs/stable/user_guide/indexing.html#returning-a-view-versus-a-copy\n", " df['DESC'] = df['DESC'].apply(clean_description_text)\n" ] } ], "source": [ "def clean_abstract(text):\n", " # Step 1: Remove initial text up to and including the first `>`\n", " cleaned_text = text.split('>', 1)[-1].strip()\n", " \n", " # Step 2: Remove any numbers within round brackets, e.g., \"(10)\"\n", " cleaned_text = re.sub(r\"\\(\\d+\\)\", \"\", cleaned_text)\n", " \n", " # Final cleaning to remove extra whitespace\n", " return cleaned_text.strip()\n", "\n", "def clean_claim_text(text):\n", " # Step 1: Remove the initial patent number and any tags that follow it, such as
and

\n", " text = re.sub(r\"^\\(.*?\\)

\", \"\", text)\n", " \n", " # Step 2: Remove all content within

tags or tags (and the tags themselves)\n", " text = re.sub(r\"

.*?

|.*?\", \"\", text, flags=re.DOTALL)\n", " \n", " # Step 3: Insert a newline before any claim number following `

`\n", " text = re.sub(r\"

(\\d+\\.)\", r\"\\n\\1\", text)\n", " \n", " # Step 4: Remove all remaining HTML-like tags\n", " text = re.sub(r\"<[^>]+>\", \"\", text)\n", " \n", " # Step 5: Remove round brackets and their contents\n", " text = re.sub(r\"\\([^)]*\\)\", \"\", text)\n", " \n", " # Final cleanup to remove any extraneous whitespace\n", " return text.strip()\n", "\n", "\n", "def clean_description_text(text):\n", " # Step 1: Remove specific headings like \"CROSS REFERENCE TO RELATED APPLICATION\" within

tags\n", " # Adjusted regex to match specific

sections and remove the entire section if it matches\n", " cleaned_text = re.sub(r\"

.*?RELATED APPLICATION.*?

\", \"\", text, flags=re.DOTALL | re.IGNORECASE)\n", " \n", " # Step 2: Remove other tags like

,

,
,
    ,
  • ,
    • , and
\n", " cleaned_text = re.sub(r\"|
||\", \"\", cleaned_text, flags=re.DOTALL)\n", "\n", " # Step 3: Remove all instances of \"FIG.\", \"fig.\", followed by numbers\n", " cleaned_text = re.sub(r\"\\bFIG\\.?\\s*\\d+|\\bfig\\.?\\s*\\d+\", \"\", cleaned_text, flags=re.IGNORECASE).strip()\n", "\n", " # Step 4: Replace paragraph numbers with a newline and keep the paragraph number as text\n", " cleaned_text = re.sub(r'\\[(\\d{4})\\]\\s*', r\"\\n[\\1]\", cleaned_text)\n", "\n", " # Step 5: Remove standalone numbers, excluding those followed by '%' or letters\n", " cleaned_text = re.sub(r\"\\b\\d+\\b(?![%a-zA-Z])\", \"\", cleaned_text)\n", "\n", " # Step 6: Remove empty square brackets created without a number\n", " cleaned_text = re.sub(r\"\\[\\]\", \"\", cleaned_text).strip()\n", "\n", " # Step 7: Remove empty parentheses \"()\"\n", " cleaned_text = re.sub(r\"\\(\\s*\\)\", \"\", cleaned_text).strip()\n", "\n", " # Step 8: Remove any remaining HTML tags, including those with attributes\n", " cleaned_text = re.sub(r\"<[^>]+>\", \"\", cleaned_text).strip()\n", "\n", " # Step 9: Add a line number at the start of each new line\n", " lines = cleaned_text.splitlines() # Split text by lines\n", " cleaned_text = \"\\n\".join(f\"{i + 1}. {line.strip()}\" for i, line in enumerate(lines) if line.strip())\n", "\n", " return cleaned_text\n", " \n", "\n", "# Apply the cleaning function to the 'ECLM' column in the DataFrame\n", "df['AB'] = df['AB'].apply(clean_abstract)\n", "df['ECLM'] = df['ECLM'].apply(clean_claim_text)\n", "df['DESC'] = df['DESC'].apply(clean_description_text)" ] }, { "cell_type": "code", "execution_count": 13, "metadata": {}, "outputs": [ { "data": { "text/html": [ "
\n", "\n", "\n", " \n", " \n", " \n", " \n", " \n", " \n", " \n", " \n", " \n", " \n", " \n", " \n", " \n", " \n", " \n", " \n", " \n", " \n", " \n", " \n", " \n", " \n", " \n", " \n", " \n", " \n", " \n", " \n", " \n", " \n", " \n", " \n", " \n", " \n", " \n", " \n", " \n", " \n", " \n", " \n", " \n", " \n", " \n", " \n", " \n", " \n", " \n", " \n", " \n", " \n", " \n", " \n", "
IDTIABECLMDESC
0EP4441780_A1Porous plug for electrostatic chuck gas deliveryPorous plugs for gas delivery in substrate sup...1. A porous plug for use in a substrate suppor...1. FIELD\\n2. Embodiments of the present disclo...
1EP-412229_A1Thermally stable sealing device for a butterfl...A rotary valve assembly having a housing, a va...1. Temperature-resistant bidirectional sealing...1. BACKGROUND OF THE INVENTIONThis invention r...
2DE102019112957_A1Annular seal for spark plug or the likeA sealing unit 1 comprises annular first and s...1. A seal comprising an annular first seal el...1. Field of technology\\n2. This disclosure rel...
3US20040200715_A1Dynamic flange seal and sealing systemThe present invention features a flange to fla...What is claimed and desired to be secured by L...1. RELATED APPLICATIONS\\n2. This application c...
4WO201879632_A1Seal structure, sealing method, and coupling e...Provided are a seal structure and sealing meth...1. A seal structure provided at a butt portion...1. This application is related to co-pending a...
\n", "
" ], "text/plain": [ " ID TI \\\n", "0 EP4441780_A1 Porous plug for electrostatic chuck gas delivery \n", "1 EP-412229_A1 Thermally stable sealing device for a butterfl... \n", "2 DE102019112957_A1 Annular seal for spark plug or the like \n", "3 US20040200715_A1 Dynamic flange seal and sealing system \n", "4 WO201879632_A1 Seal structure, sealing method, and coupling e... \n", "\n", " AB \\\n", "0 Porous plugs for gas delivery in substrate sup... \n", "1 A rotary valve assembly having a housing, a va... \n", "2 A sealing unit 1 comprises annular first and s... \n", "3 The present invention features a flange to fla... \n", "4 Provided are a seal structure and sealing meth... \n", "\n", " ECLM \\\n", "0 1. A porous plug for use in a substrate suppor... \n", "1 1. Temperature-resistant bidirectional sealing... \n", "2 1. A seal comprising an annular first seal el... \n", "3 What is claimed and desired to be secured by L... \n", "4 1. A seal structure provided at a butt portion... \n", "\n", " DESC \n", "0 1. FIELD\\n2. Embodiments of the present disclo... \n", "1 1. BACKGROUND OF THE INVENTIONThis invention r... \n", "2 1. Field of technology\\n2. This disclosure rel... \n", "3 1. RELATED APPLICATIONS\\n2. This application c... \n", "4 1. This application is related to co-pending a... " ] }, "execution_count": 13, "metadata": {}, "output_type": "execute_result" } ], "source": [ "df" ] }, { "cell_type": "markdown", "metadata": {}, "source": [ "#### Structure the orbit data into the json dict of dicts format " ] }, { "cell_type": "code", "execution_count": 24, "metadata": {}, "outputs": [ { "name": "stdout", "output_type": "stream", "text": [ "\n", "Structured JSON with claims and paragraphs saved to 'structured_orbit.json'\n" ] } ], "source": [ "orbit_json = {}\n", "for _, row in df.iterrows():\n", " application_id = row['ID'] # Assuming 'ID' is the Application ID\n", " content = row.drop(['ID', 'ECLM', 'DESC']).to_dict() # Drop 'ID', 'ECLM', and 'DESC' columns for base content\n", " \n", " # Process ECLM claims into c-en-000x keys\n", " claims = re.split(r\"\\s*(\\d+)\\.\\s+\", row['ECLM'])\n", " claim_dict = {}\n", " for i in range(1, len(claims) - 1, 2):\n", " claim_number = int(claims[i])\n", " claim_text = claims[i + 1]\n", " claim_key = f\"c-en-{claim_number:04d}\" # Format claim number as c-en-000x\n", " claim_dict[claim_key] = claim_text.strip()\n", " \n", " # Process DESC paragraphs based on numbered paragraphs (e.g., \"1.\", \"2.\", etc.)\n", " paragraphs = re.split(r\"\\s*(\\d+)\\.\\s+\", row['DESC'])\n", " paragraph_dict = {}\n", " for i in range(1, len(paragraphs) - 1, 2):\n", " para_number = int(paragraphs[i])\n", " para_text = paragraphs[i + 1]\n", " para_key = f\"p{para_number:04d}\" # Format paragraph number as p000x\n", " paragraph_dict[para_key] = para_text.strip()\n", "\n", " # Update content dictionary with claims and paragraphs\n", " content.update(claim_dict)\n", " content.update(paragraph_dict)\n", " \n", " # Add to main JSON structure with application ID as top-level key\n", " orbit_json[application_id] = {\"Patent Num\": application_id, \"content\": content}\n", "\n", "# Display as JSON formatted string\n", "json_output = json.dumps(orbit_json, indent=2)\n", "\n", "# Optionally, save to a JSON file\n", "output_file_path = \"structured_orbit.json\"\n", "with open(output_file_path, \"w\") as file:\n", " json.dump(orbit_json, file, indent=2)\n", "\n", "print(f\"\\nStructured JSON with claims and paragraphs saved to '{output_file_path}'\")" ] }, { "cell_type": "code", "execution_count": 16, "metadata": {}, "outputs": [ { "name": "stdout", "output_type": "stream", "text": [ "\n", "\n" ] } ], "source": [ "print(type(orbit_json))\n", "print(type(concurIP_patents))" ] }, { "cell_type": "code", "execution_count": 17, "metadata": {}, "outputs": [ { "name": "stdout", "output_type": "stream", "text": [ "5\n", "4\n" ] } ], "source": [ "print(len(orbit_json))\n", "print(len(concurIP_patents))" ] }, { "cell_type": "code", "execution_count": 18, "metadata": {}, "outputs": [ { "data": { "text/plain": [ "'{\\n \"US10964579\": {\\n \"Patent Num\": \"US10964579\",\\n \"Content\": {\\n \"title\": \"Electrostatic chuck\",\\n \"pa01\": \"According to the embodiment, an electrostatic chuck includes a ceramic dielectric substrate, a base plate, and a porous part. The ceramic dielectric substrate has a first major surface placing a suction object, a second major surface on an opposite side to the first major surface, and a through hole provided from the second to first major surface. The base plate supports the ceramic dielectric substrate and includes a gas introduction path communicating with the through hole. The porous part is provided in the gas introduction path. The porous part includes sparse portions including pores and a dense portion having a higher density than the sparse portions. Each of the sparse portions extends in a first direction from the base plate toward the ceramic dielectric substrate. The dense portion is positioned between the sparse portions. The sparse portions include the pores and a wall portion provided between the pores.\",\\n \"c-en-0001\": \"An electrostatic chuck, comprising:\\\\n a ceramic dielectric substrate having a first major surface configured for placing a suction object, a second major surface on an opposite side to the first major surface, and a through hole provided from the second major surface to the first major surface;\\\\n an electrode disposed in the ceramic dielectric substrate between the first major surface and the second major surface;\\\\n a base plate supporting the ceramic dielectric substrate and including a gas introduction path communicating with the through hole, the base plate being made of a metal; and\\\\n a porous part provided in the gas introduction path,\\\\n the porous part including a plurality of sparse portions including a plurality of pores, and a dense portion having a density higher than a density of the sparse portions,\\\\n each of the plurality of sparse portions extending in a first direction from the base plate toward the ceramic dielectric substrate,\\\\n the dense portion being positioned between the plurality of sparse portions,\\\\n the sparse portions including the pores and a wall portion provided between the pores, and\\\\n a minimum value of a dimension of the wall portion being smaller than a minimum value of a dimension of the dense portion in a second direction substantially perpendicular to the first direction.\",\\n \"c-en-0002\": \"The electrostatic chuck according to claim 1, wherein\\\\n a dimension of the plurality of pores provided in each of the plurality of sparse portions\\\\n is smaller than the dimension of the dense portion in the second direction.\",\\n \"c-en-0003\": \"The electrostatic chuck according to claim 1, wherein\\\\n an aspect ratio of the plurality of pores provided in each of the plurality of sparse portions is not less than 30.\",\\n \"c-en-0004\": \"The electrostatic chuck according to claim 1, wherein\\\\n a dimension of the plurality of pores provided in each of the plurality of sparse portions is not less than 1 micrometer and not more than 20 micrometers in the second direction.\",\\n \"c-en-0005\": \"The electrostatic chuck according to claim 1, wherein\\\\n when viewed along the first direction, the plurality of pores includes a first pore positioned at a center portion of the sparse portions, and\\\\n a number of pores of the plurality of pores adjacent to the first pore and surrounding the first pore is 6.\",\\n \"c-en-0006\": \"The electrostatic chuck according to claim 1, further comprising:\\\\n a bonding layer provided in a part between the base plate and the ceramic dielectric substrate, the bonding layer including a resin material,\\\\n the bonding layer including a first portion positioned between an end surface of the porous part on the second major surface side and the second major surface in the first direction.\",\\n \"c-en-0007\": \"The electrostatic chuck according to claim 1, further comprising:\\\\n a bonding layer provided in a part between the base plate and the ceramic dielectric substrate, the bonding layer including a resin material,\\\\n the bonding layer including a second portion positioned between the base plate and the porous part in the second direction, and\\\\n the second portion contacting the porous part in the first direction.\",\\n \"p0001\": \"CROSS-REFERENCE TO RELATED APPLICATIONS\",\\n \"p0002\": \"This application is based upon and claims the benefit of priority from Japanese Patent Application No. 2019-039826, filed on Mar. 5, 2019; the entire contents of which are incorporated herein by reference.\",\\n \"p0003\": \"(US10964579)\",\\n \"p0004\": \"FIELD\",\\n \"p0005\": \"Embodiments described herein relate generally to an electrostatic chuck.\",\\n \"p0006\": \"BACKGROUND\",\\n \"p0007\": \"An electrostatic chuck made of ceramic manufactured by sandwiching electrodes between ceramic electrostatic substrates made of alumina and firing them applies an electrostatic suction power to built-in electrodes and sucks a substrate such as a silicon wafer or the like by an electrostatic force. In the electrostatic chuck like this, an inactive gas such as helium (He) or the like is flown between a surface of the ceramic dielectric substrate and a back side of the substrate being a suction object, and a temperature of the substrate being the suction object is controlled.\",\\n \"p0008\": \"For example, temperature increase of the substrate may be accompanied during processing in a CVD (Chemical Vapor Deposition) apparatus, a sputtering apparatus, an ion implantation apparatus, an etching apparatus or the like in which the substrate is processed. In the electrostatic chuck used for those apparatus, an inactive gas such as He or the like is flown between the ceramic dielectric substrate and the substrate being the suction object, and the temperature increase of the substrate is suppressed by bringing the inactive gas into contact with the substrate.\",\\n \"p0009\": \"In the electrostatic chuck which controls the substrate temperature by the inactive gas such as He or the like, holes (gas introduction path) for introducing the inactive gas such as He or the like are provided in the ceramic dielectric substrate and a base plate supporting the ceramic dielectric substrate.\",\\n \"p0010\": \"Here, when processing the substrate in the apparatus, discharge may occur in the gas introduction path. JP 2010-123712 A (Kokai) discloses an electrostatic chuck with improved insulating property in the gas introduction path by providing a ceramic sintered porous body in the gas introduction path and using the structure of the ceramic sintered porous body and a film hole as a gas flow path.\",\\n \"p0011\": \"However, since the porosity of the porous part is high, the heat transfer rate from the porous part to the ceramic dielectric substrate is lower than the thermal conductivity from the metal base plate to the ceramic dielectric substrate. Therefore, the temperature difference between the substrate temperature when the substrate is cooled by flowing the conductive gas from the gas introduction path and the substrate temperature when not flowing the conductive gas is likely to be large. That is, in the entire substrate, a region having a large temperature difference within the wafer surface (so-called hot spot or cold spot) is generated in a portion close to the porous part, and there is a problem that temperature control with high temperature uniformity of the wafer cannot be performed.\",\\n \"p0012\": \"SUMMARY\",\\n \"p0013\": \"According to the embodiment, an electrostatic chuck includes a ceramic dielectric substrate, a base plate, and a porous part. The ceramic dielectric substrate has a first major surface placing a suction object, a second major surface on an opposite side to the first major surface, and a through hole provided from the second major surface to the first major surface. The base plate supports the ceramic dielectric substrate. The base plate includes a gas introduction path communicating with the through hole. The base plate is made of a metal. The porous part is provided in the gas introduction path. The porous part includes a plurality of sparse portions and a dense portion. The sparse portions include a plurality of pores. The dense portion has a density higher than a density of the sparse portions. Each of the plurality of sparse portions extends in a first direction from the base plate toward the ceramic dielectric substrate. The dense portion is positioned between the plurality of sparse portions. The sparse portions include the pores and a wall portion. The wall portion is provided between the pores. A minimum value of a dimension of the wall portion is smaller than a minimum value of a dimension of the dense portion in a second direction substantially perpendicular to the first direction.\",\\n \"p0014\": \"(US10964579)\",\\n \"p0015\": \"BRIEF DESCRIPTION OF THE DRAWINGS\",\\n \"p0016\": \"FIG. 1 is a schematic cross sectional view illustrating an electrostatic chuck according to an embodiment;\",\\n \"p0017\": \"FIG. 2A and FIG. 2B are schematic views illustrating the electrostatic chuck according to the embodiment;\",\\n \"p0018\": \"FIG. 3A and FIG. 3B are schematic views illustrating a porous part of the electrostatic chuck according to the embodiment;\",\\n \"p0019\": \"FIG. 4 is a schematic plan view illustrating the porous part of the electrostatic chuck according to the embodiment;\",\\n \"p0020\": \"FIG. 5 is a schematic plan view illustrating the porous part of the electrostatic chuck according to the embodiment;\",\\n \"p0021\": \"FIG. 6A and FIG. 6B are schematic plan views illustrating the porous part of the electrostatic chuck according to the embodiment;\",\\n \"p0022\": \"FIG. 7A and FIG. 7B are schematic views illustrating another porous part according to the embodiment;\",\\n \"p0023\": \"FIG. 8 is a schematic enlarged cross sectional view illustrating a modification of the portion A shown in FIG. 1;\",\\n \"p0024\": \"FIG. 9 is a schematic enlarged cross sectional view illustrating a modification of the portion A shown in FIG. 1; and\",\\n \"p0025\": \"FIG. 10 is a schematic enlarged cross sectional view illustrating a modification of the portion A shown in FIG. 1.\",\\n \"p0026\": \"(US10964579)\",\\n \"p0027\": \"DETAILED DESCRIPTION\",\\n \"p0028\": \"The first invention relates to an electrostatic chuck. The electrostatic chuck includes a ceramic dielectric substrate having a first major surface placing a suction object, a second major surface on an opposite side to the first major surface, and a through hole provided from the second major surface to the first major surface, a metal base plate supporting the ceramic dielectric substrate and including a gas introduction path communicating with the trough hole, and a porous part provided in the gas introduction path. The porous part includes a plurality of sparse portions including a plurality of pores and a dense portion having a density higher than a density of the sparse portions. Each of the sparse portions extends in a first direction from the base plate toward the ceramic dielectric substrate. The dense portion is positioned between the plurality of sparse portions. The sparse portions include the pores and a wall portion provided between the pores, and a minimum value of a dimension of the wall portion is smaller than a minimum value of a dimension of the dense portion in a second direction substantially perpendicular to the first direction.\",\\n \"p0029\": \"According to the electrostatic chuck, since the thermal conductivity of the porous part can be increased, temperature control can be made to the suction object with high temperature uniformity of the wafer.\",\\n \"p0030\": \"The second invention relates to the electrostatic chuck in the first invention, wherein a dimension of the plurality of pores provided in each of the plurality of sparse portions is smaller than the dimension of the dense portion in the second direction.\",\\n \"p0031\": \"According to the electrostatic chuck, since the dimension of the plurality of pores can be sufficiently small, the thermal conductivity of the porous part can be increased and temperature control can be made to the suction object with higher temperature uniformity of the wafer.\",\\n \"p0032\": \"The third invention related to the electrostatic chuck in the first or second inventions, wherein an aspect ratio of the plurality of pores provided in each of the plurality of sparse portions is not less than 30.\",\\n \"p0033\": \"According to the electrostatic chuck, the temperature uniformity of the wafer can be further improved.\",\\n \"p0034\": \"The fourth invention relates to the electrostatic chuck in the one of the first to third inventions, wherein a dimension of the plurality of pores provided in each of the plurality of sparse portions is not less than 1 micrometer and not more than 20 micrometers in the second direction.\",\\n \"p0035\": \"According to the electrostatic chuck, since the pores having the pore dimension of 1 to 20 micrometers and extending in one direction can be arranged, the high temperature uniformity of the wafer can be realized.\",\\n \"p0036\": \"The fifth invention relates to the electrostatic chuck in one of the first to fourth inventions, wherein when viewed along the first direction, the plurality of pores include a first pore positioned at a center portion of the sparse portion, and a number of pores of the plurality of pores adjacent to the first pore and surrounding the first pore is 6.\",\\n \"p0037\": \"According to the electrostatic chuck, in a plan view, it is possible to dispose the plurality of pores with high isotropy and high density. Thereby, while securing the high temperature uniformity of the wafer and the flow rate of the flowing gas, the rigidity of the porous part can be improved.\",\\n \"p0038\": \"The sixth invention relates to the electrostatic chuck in one of the first to fifth inventions, further comprising: a bonding layer provided in a part between the base plate and the ceramic dielectric substrate and including a resin material, the bonding layer including a first portion positioned between an end surface of the porous part on the second major surface side and the second major surface in the first direction.\",\\n \"p0039\": \"According to the electrostatic chuck, the bonding layer includes the first portion positioned between the end surface of the porous part on the second major surface side and the second major surface in the first direction, and thus even if a pressure along the first direction is applied to the porous part by a gas introduced in the gas introduction path, the porous part can be suppressed from moving along the first direction. Thereby, position shift of the porous part can be suppressed.\",\\n \"p0040\": \"The seventh invention relates to the electrostatic chuck in one of the first to sixth inventions, further comprising: a bonding layer provided in a part between the base plate and the ceramic dielectric substrate and including a resin material, the bonding layer including a second portion positioned between the base plate and the porous part in the second direction, the second portion contacting the porous part in the first direction.\",\\n \"p0041\": \"According to the electrostatic chuck, the bonding layer includes the second portion positioned between the base plate and the porous part in the second direction and the second portion contacts the porous part in the first direction, and thus the porous part can be surely suppressed from moving in the first direction.\",\\n \"p0042\": \"Thereby, position shift of the porous part can be surely suppressed.\",\\n \"p0043\": \"Various embodiments will be described hereinafter with reference to the accompanying drawings.\",\\n \"p0044\": \"In the drawings, the same reference numbers are applied to the same elements and the detailed description will be omitted as appropriate.\",\\n \"p0045\": \"FIG. 1 is a schematic cross sectional view illustrating an electrostatic chuck according to the embodiment.\",\\n \"p0046\": \"As illustrated in FIG. 1, an electrostatic chuck 110 according to the embodiment includes a ceramic dielectric substrate 11, a base plate 50 and a porous part 70.\",\\n \"p0047\": \"The ceramic dielectric substrate 11 is, for example, a plate-shaped base material of sintered ceramic, and has a first major surface 11a having a suction object W placed and a second major surface 11b on an opposite side to the first major surface 11a. The suction object W is, for example, a semiconductor substrate or the like such as a silicon wafer or the like.\",\\n \"p0048\": \"An electrode 12 is provided on the ceramic dielectric substrate 11. The electrode 12 is provided between the first major surface 11a and the second major surface 11b of the ceramic dielectric substrate 11. That is, the electrode 12 is formed to be inserted into the ceramic dielectric substrate 11. The electrostatic chuck 110 generates a charge on the first major surface 11a side of the electrode 12 by application of a suction holding voltage 80 to the electrode 12, and sucks and holds the object W by an electrostatic force.\",\\n \"p0049\": \"Here, in the description of the embodiment, a direction from the base plate 50 toward the ceramic dielectric substrate 11 is taken as a Z-direction (corresponding to one example of a first direction), one of directions substantially perpendicular to the Z-direction is taken as a Y-direction (corresponding to one example of a second direction), and a direction substantially perpendicular to the Z-direction and the Y-direction is taken as an X-direction (corresponding to one example of a second direction).\",\\n \"p0050\": \"The electrode 12 is provided to be film-shaped along the first major surface 11a and the second major surface 11b of the ceramic dielectric substrate 11. The electrode 12 is a suction electrode for sucking and holding the object W. The electrode 12 may be either unipolar type or bipolar type. The electrode shown in FIG. 1 is bipolar type, and 2 pole electrodes 12 are provided on the same plane.\",\\n \"p0051\": \"The electrode 12 is provided with a connection part 20 extending to the second major surface 11b side of the ceramic dielectric substrate 11. The connection part 20 is a via (solid type) and a via hole (hollow type) communicating with the electrode 12, or a metal terminal is connected by an adequate method such as brazing.\",\\n \"p0052\": \"The base plate 50 is a metal member supporting the ceramic dielectric substrate 11. The ceramic dielectric substrate 11 is fixed onto the base plate 50 by the bonding layer 60 illustrated in FIG. 2A.\",\\n \"p0053\": \"The bonding layer 60 is provided in a part between the base plater 50 and the ceramic dielectric substrate 11 in the Z-direction, and bonds the base plate 50 and the ceramic dielectric substrate 11. The bonding layer 60 includes a resin material. The bonding layer 60 is based on, for example, a hardened layer of silicone adhesive.\",\\n \"p0054\": \"The base plater 50 is, for example, divided into an upper portion 50a and a lower portion 50b made of aluminum, and a communicating passage 55 is provided between the upper portion 50a and the lower portion 50b. One end side of the communicating passage 55 is connected to an input path 51, and the other end side of the communicating passage 55 is connected to an output path 52.\",\\n \"p0055\": \"The base plate 50 also plays a role to adjust a temperature of the electrostatic chuck 110. For example, when cooling the electrostatic chuck 110, a cooling medium is flown in from the input path 51, is passed through the communicating passage 55, and is flown out from the output path 52. Thereby, a heat of the base plate 50 is absorbed by the cooling medium, and the ceramic dielectric substrate 11 installed thereon can be cooled. On the other hand, when holding the electrostatic chuck 110 warm, it is also possible to put a heat holding medium in the communicating passage 55. It is also possible to incorporate a heating element in the ceramic dielectric substrate 11 and the base plate 50. In this way, when the temperature of the ceramic dielectric substrate 11 is adjusted via the base plater 50, the temperature of the object W to be sucked and held by the electrostatic chuck 110 can be adjusted.\",\\n \"p0056\": \"Dots 13 are provided on the first major surface 11a side of the ceramic dielectric substrate 11 as necessary, and a groove 14 is provided between the dots 13. The groove 14 is communicated, and a space is formed between the groove 14 and the back side of the object W placed on the electrostatic chuck 110.\",\\n \"p0057\": \"A through hole 15 provided on the ceramic dielectric substrate 11 is connected to the groove 14. The through hole 15 is provided from the second major surface 11b toward the first major surface 11a of the ceramic dielectric substrate 11 to pierce the ceramic dielectric substrate 11.\",\\n \"p0058\": \"The temperature of the object W and the particles adhering to the object W can be controlled in a favorable state by adequately selecting a height of the dot 13 (a depth of the groove 14), an area ratio and shapes or the like of the dot 13 and the groove 14.\",\\n \"p0059\": \"A gas introduction path 53 is provided in the base plate 50. The gas introduction path 53 is provided, for example, to pierce the base plate 50. The gas introduction path 53 may be provided to reach the ceramic dielectric substrate 11 side by diverging at the middle of the other gas introduction path 53 without piercing the base plate 50. The gas introduction path 53 may be provided at multiple positions of the base plate 50.\",\\n \"p0060\": \"The gas introduction path 53 is communicated with the through hole 15. When a transmission gas of helium (He) or the like is introduced from the gas introduction path 53 in a state which the object W is sucked and held, the transmission gas flows in the space provided between the object W and the groove 14, and the object W can be cooled directly by the transmission gas.\",\\n \"p0061\": \"The porous part 70 is provided in the gas introduction path 53 provided in the base plate 50. The porous part 70 is fitted in the base plate 50 (gas introduction path 53) on the ceramic dielectric substrate 11 side.\",\\n \"p0062\": \"FIG. 2A and FIG. 2B are schematic views illustrating the electrostatic chuck according to the embodiment. FIG. 2A illustrates around the porous part 70. FIG. 2A corresponds to an enlarged view of the portion A shown in FIG. 1. FIG. 2B is a plan view illustrating the porous part 70.\",\\n \"p0063\": \"As illustrated in FIG. 2A, for example, a counter sunk portion 53a is provided in the base plate 50 (gas introduction path 53) on the ceramic dielectric substrate 11 side. The counter sunk portion 53a is provided to be tube-shaped. The porous part 70 is fitted in the counter sunk portion 53a by adequately designing an inner diameter of the counter sunk portion 53a.\",\\n \"p0064\": \"An upper surface 70U of the porous part 70 is exposed to an upper surface 50U of the base plate 50. The upper surface 70U of the porous part 70 is an end surface of the porous part 70 in the Z-direction (first direction). The upper surface 70U of the porous part 70 opposes the second major surface 11b of the ceramic dielectric substrate 11. There is a space SP between the upper surface 70U of the porous part 70 and the second major surface 11b of the ceramic dielectric substrate 11. That is, the bonding layer 60 is not provided between the upper surface 70U of the porous part 70 and the second major surface 11b of the ceramic dielectric substrate 11.\",\\n \"p0065\": \"As illustrated in FIG. 2B, the porous part 70 includes a porous region 71 including multiple pores and a dense region 73 denser than the porous part 71. The dense region 73 is a region having fewer pores than the porous region 71 or a region having substantially no pore. A porosity (percent: %) of the dense region 73 is lower than a porosity (%) of the porous region 71. For that reason, a density (gram/cubic centimeter: g/cm3) of the dense region 73 is higher than the density (g/cm3) of the porous region 71. The dense region 73 is dense compared with the porous region 71, and thus, for example, the rigidity (mechanical strength) of the dense region 73 is higher than the rigidity of the porous region 71.\",\\n \"p0066\": \"The porosity of the dense region 73 is, for example, a ratio of a volume of the space (pore) included in the dense region 73 to a total volume of the dense region 73. The porosity of the porous region 71 is, for example, a ratio of a volume (pore) included in the porous region 71 to a total volume of the porous region 71. For example, the porosity of the porous region 71 is not less than 5% and not more than 40%, favorably not less than 10% and not more than 30%, and the porosity of the dense region 73 is not less than 0% and not more than 5%.\",\\n \"p0067\": \"The porous part 70 is columnar (for example, cylindrical). The porous region 71 is columnar (for example, cylindrical). The dense region 73 contacts the porous region 71, or is continuous to the porous region 71. As shown in FIG. 2B, when viewed along the Z-direction, the dense region 73 surrounds an outer circumference of the porous region 71. The dense region 73 surrounds a side surface 71s of the porous region 91 and is tubular (for example cylindrical). In other words, the porous region 71 is provided to pierce the dense region 73 in the Z-direction. The gas flown from the gas introduction path 53 passes through multiple pores provided in the porous region 71 and is supplied to the groove 14 through the through hole 15.\",\\n \"p0068\": \"The porous part 70 including the porous region 71 like this is provided, and thus while securing the flow rate of the gas flowing through the through hole 15, the thermal conductivity in the porous part 70 can be improved. Therefore, the temperature control with high temperature uniformity of the wafer can be made to the suction object W. The porous part 70 includes the dense region 73, and thus the rigidity (mechanical strength) of the porous part 70 can be improved.\",\\n \"p0069\": \"A thickness of the dense region 73 (a length L0 between the side surface 71s of the porous region 71 and the side surface 73s of the dense region 73) is, for example, not less than 100 μm and not more than 1000 μm.\",\\n \"p0070\": \"An insulative ceramic is used for a material of the porous part 70. The porous part 70 (each of the porous region 71 and the dense region 73) includes at least one of aluminum oxide (Al2O3), titanium oxide (TiO2) or yttrium oxide (Y2O3). Thereby, the high temperature uniformity of the wafer and the high rigidity of the porous part 70 can be obtained.\",\\n \"p0071\": \"For example, the porous part 70 includes one of aluminum oxide, titanium oxide and yttrium oxide as a main component.\",\\n \"p0072\": \"In the specification, a ceramic purity such as aluminum oxide of the ceramic dielectric substrate 11 can be measured by a fluorescent X-ray analysis, ICP-AES method (Inductive Coupled Plasma-Atomic Emission Spectrometry: high-frequency inductively coupled plasma emission spectrometric analysis method) or the like.\",\\n \"p0073\": \"For example, a material of the porous region 71 is the same as a material of the dense region 73. However, the material of the porous region 71 may be different from the material of the dense region 73. A composition of the material of the porous region 71 may be different from a composition of the material of the dense region 73.\",\\n \"p0074\": \"FIG. 3A and FIG. 3B are schematic views illustrating the porous part of the electrostatic chuck according to the embodiment.\",\\n \"p0075\": \"FIG. 3A is a plan view of the porous part 70 viewed along the Z-direction, and FIG. 3B is a cross sectional view of the porous part 70 in a ZY plane.\",\\n \"p0076\": \"As shown in FIG. 3A and FIG. 3B, in this example, the porous region 71 includes multiple sparse portions 74 and a dense portion 75. Each of the multiple sparse portions 74 includes multiple pores. The dense portion 75 is denser than the sparse portions 74. That is, the dense portion 75 is a portion with a fewer pores than the sparse portions 74, or a portion with substantially no pore. A porosity of the sparse portions 75 is lower than a porosity of the dense portion 74. For that reason, the density of the dense portion 75 is higher than the density of the sparse portions 74. The porosity of the dense portion 75 may be the same as the porosity of the dense region 73. Since the dense portion 75 is dense compared with the sparse portions 74, the rigidity of the dense portion 75 is higher than the rigidity of the sparse portions 74.\",\\n \"p0077\": \"The porosity of one sparse portion 74 is, for example, a ratio of the space (pore) included in the sparse portion 74 to the whole volume of the sparse portion 74. The porosity of the dense portion 75 is, for example, a ratio of the volume of the space (pore) included in the dense portion 75 to the whole volume of the dense portion 75. For example, the porosity of the sparse portion 74 is not less than 20% and not more than 60%, favorably not less than 30% and not more than 50%, and the porosity of the dense portion 75 is not less than 0% and not more than 5%.\",\\n \"p0078\": \"Each of the multiple sparse portions 74 extends in the Z-direction. For example, each of the multiple sparse portions 74 is columnar (cylindrical or polygonal columnar), and is provided to pierce the porous region 71 in the Z-direction. The dense portion 75 is positioned between the multiple sparse portions 74. The dense portion 75 is wall-shaped and partitions the sparse portions 74 which are mutually adjacent. As shown in FIG. 3A, when viewed along the Z-direction, the dense portion 75 is provided to surround the outer circumference of each of the multiple sparse portions 74. The dense portion 75 is continuous to the dense region 73 in the outer circumference of the porous region 71.\",\\n \"p0079\": \"The number of the sparse portions 74 provided in the porous region 71 is, for example, not less than 50 and not more than 1000. As shown in FIG. 3A, when viewed along the Z-direction, the multiple sparse portions 74 have substantially the same size. For example, when viewed along the Z-direction, the multiple sparse portions 74 are dispersed isotopically and uniformly in the porous region 71. For example, distances between the adjacent sparse portions 74 (namely, a thickness of the dense portion 75) are substantially constant.\",\\n \"p0080\": \"For example, when viewed along the Z-direction, a distance L11 between the side surface 73s of the dense region 73 and the sparse portion 74 closest to the side surface 73s of the multiple sparse portions 74 is not less than 100 μm and not more than 1000 μm.\",\\n \"p0081\": \"In this way, the multiple sparse portions 74 and the dense portion 75 which is denser than the sparse portions 74 are provided in the porous region 71, and thereby, in comparison with the case where multiple pores are dispersed three dimensionally and randomly in the porous region 71, the thermal conductivity of the porous part 70 can be increased, while securing the temperature uniformity of the wafer and the flow rate of the gas flowing through the through hole 15, the rigidity of the porous part 70 can be improved.\",\\n \"p0082\": \"For example, if the porosity of the porous region 71 increases, the flow rate of the gas increases, however the temperature uniformity of the wafer and the rigidity are decreased. On the contrary, even if the porosity is large, the temperature uniformity of the wafer and the rigidity can be suppressed from decreasing by providing the dense portion 75.\",\\n \"p0083\": \"For example, when viewed along the Z-direction, a minimum circle, an ellipse or a polygon including all of the multiple sparse portions 74 are supposed. It can be conceived that the inside of the circle, ellipse or polygon is the porous region 71 and the outside of the circle, ellipse or polygon is the dense region 73.\",\\n \"p0084\": \"As described above, the porous part 70 can include the multiple sparse portions 74 including multiple pores 76 including a first pore and a second pore, and the dense portion 75 having a density higher than a density of the sparse portions 74. Each of the multiple sparse portions 74 extends in the Z-direction. The dense portion 75 is positioned between the multiple sparse portions 74. The sparse portions 74 includes a wall portion 77 provided between the pore 76 (first pore) and the pore 76 (second pore). The minimum value of a dimension of the wall portion 77 can be smaller than the minimum value of a dimension of the dense portion 75 in the X-direction or the Y-direction. In this way, since the sparse portions 74 and the dense portion 75 which extend in the Z-direction are provided in the porous part 70, while securing the temperature uniformity of the wafer and the gas flow rate, the mechanical strength (rigidity) of the porous part 70 can be improved.\",\\n \"p0085\": \"A dimension of the multiple pores 76 provided in each of the multiple sparse portions 74 can be smaller than the dimension of the dense portion 75 in the X-direction or the Y-direction. In this way, since the dimension of the multiple pores 76 can be sufficiently small, the temperature uniformity of the wafer can be further improved.\",\\n \"p0086\": \"A ratio of vertical/side (aspect ratio) of the multiple pores 76 provided in each of the multiple sparse portions 74 can be not less than 30 and not more than 10000. In this way, the temperature uniformity of the wafer can be further improved. More favorably, a lower limit of the ratio of vertical/side (aspect ratio) of the multiple pores 76 is not less than 100 and an upper limit is not more than 1600.\",\\n \"p0087\": \"In the X-direction or the Y-direction, the dimension of the multiple pores 76 provided in each of the multiple sparse portions 74 can be not less than 1 micrometer and not less than 20 micrometers. In this way, since the pores 76 having the dimension of 1 to 20 micrometers and extending in one direction can be arranged, the high temperature uniformity of the wafer can be realized.\",\\n \"p0088\": \"As illustrated in FIG. 6A and FIG. 6B described later, when viewed along the Z-direction, a first pore 76a is positioned at a center portion of the sparse portion 74, and the number of pores 76b to 796g adjacent to the first pore 76a and surrounding the first pore 76a of the multiple holes 76 can be 6. In this way, when viewed along the Z-direction, it is possible to dispose the multiple pores 76 with high isotropy and high density. Thereby, while securing the temperature uniformity of the wafer and the flow rate of the flowing gas, the rigidity of the porous part 70 can be improved.\",\\n \"p0089\": \"FIG. 4 is a schematic plan view illustrating the porous part of the electrostatic chuck according to the embodiment.\",\\n \"p0090\": \"FIG. 4 shows a portion of the porous part 70 as viewed along the Z-direction, and corresponds to an enlarged view of FIG. 3A.\",\\n \"p0091\": \"When viewed along the Z-direction, each of the multiple sparse portions 74 is substantially hexagon (substantially regular hexagon). When viewed along the Z-direction, the multiple sparse portions 74 includes a first sparse portion 74a positioned at a center portion of the porous region 71 and six sparse portions 74 (second to seventh sparse portions 74b to 74g) surrounding the first sparse portion 74a.\",\\n \"p0092\": \"The second to seventh sparse portions 74b to 74g are adjacent to the first(...)\"\\n }\\n },\\n \"US20190371578\": {\\n \"Patent Num\": \"US20190371578\",\\n \"Content\": {\\n \"title\": \"Substrate support pedestal\",\\n \"pa01\": \"The systems and methods discussed herein are associated with substrate support pedestals used in processing chambers to manufacture semiconductors, electronics, optics, and other devices. The substrate support pedestals include an electrostatic chuck body bonded to a cooling base via a bond layer. A gas flow passage is formed between a top surface of the electrostatic chuck body and a bottom surface of the cooling base, and a porous plug is positioned in the gas flow passage. The gas flow passage passes through a hole in the bond layer and the porous plug and has a swept volume physically shielded from an inside edge of the hole in the bond layer, protecting the bond layer from erosion.\",\\n \"c-en-0001\": \"A substrate support pedestal, comprising:\\\\n an electrostatic chuck body bonded to a cooling base via a bond layer;\\\\n a porous plug; and\\\\n a gas flow passage formed between a top surface of the electrostatic chuck body and a bottom surface of the cooling base, the gas flow passage passing through a hole in the bond layer and the porous plug, the gas flow passage having a swept volume physically shielded from an inside edge of the hole in the bond layer.\",\\n \"c-en-0002\": \"The substrate support pedestal of claim 1, wherein the porous plug is at least partially disposed in a chuck cavity formed in a bottom surface of the electrostatic chuck body.\",\\n \"c-en-0003\": \"The substrate support pedestal of claim 2, wherein the porous plug is at least partially disposed in a base cavity formed in a top surface of the cooling base.\",\\n \"c-en-0004\": \"The substrate support pedestal of claim 1, wherein the porous plug is coupled to the electrostatic chuck body via an adhesive layer or via a press fit.\",\\n \"c-en-0005\": \"The substrate support pedestal of claim 1 further comprising:\\\\n a sleeve disposed around the porous plug;\\\\n a seal extending across a gap formed between the electrostatic chuck body and the cooling base, the inside edge of the hole formed in the bond layer physically shielded from the swept volume of the gas flow passage by the sleeve.\",\\n \"c-en-0006\": \"The substrate support pedestal of claim 5, wherein a dead volume is defined between the sleeve and the inside edge of the hole.\",\\n \"c-en-0007\": \"The substrate support pedestal of claim 1, wherein the electrostatic chuck body further comprises:\\\\n a ring extending from a bottom surface of the electrostatic chuck body, the gas flow passage extending through the ring.\",\\n \"c-en-0008\": \"The substrate support pedestal of claim 7, wherein the ring extends across a gap formed between the electrostatic chuck body and the cooling base, the inside edge of the hole formed in the bond layer physically shielded from the swept volume of the gas flow passage by the ring.\",\\n \"c-en-0009\": \"The substrate support pedestal of claim 7 further comprising:\\\\n a sleeve positioned between the ring and the porous plug residing in the ring.\",\\n \"c-en-0010\": \"The substrate support pedestal of claim 9, wherein the sleeve extends from the ring extends to the cooling base, the inside edge of the hole formed in the bond layer physically shielded from the swept volume of the gas flow passage by the ring and the sleeve.\",\\n \"c-en-0011\": \"The substrate support pedestal of claim 1 further comprising:\\\\n a ring coupled to at least one of a bottom surface of the electrostatic chuck body and a top surface of the cooling base, the gas flow passage passing through the ring, the ring extending across a gap formed between the electrostatic chuck body and the cooling base, the inside edge of the hole formed in the bond layer physically shielded from the swept volume of the gas flow passage by the ring.\",\\n \"c-en-0012\": \"The substrate support pedestal of claim 1, wherein the cooling base further comprises:\\\\n a ring extending from a top surface of the cooling base, the gas flow passage extending through the ring.\",\\n \"c-en-0013\": \"The substrate support pedestal of claim 12, wherein the ring extends across a gap formed between the electrostatic chuck body and the cooling base, the inside edge of the hole formed in the bond layer physically shielded from the swept volume of the gas flow passage by the ring.\",\\n \"c-en-0014\": \"The substrate support pedestal of claim 12 further comprising:\\\\n a sleeve positioned between the ring and the porous plug residing in the ring.\",\\n \"c-en-0015\": \"The substrate support pedestal of claim 14, wherein the sleeve extends from the ring to the electrostatic chuck body, the inside edge of the hole formed in the bond layer physically shielded from the swept volume of the gas flow passage by the ring and the sleeve.\",\\n \"c-en-0016\": \"The substrate support pedestal of claim 1 further comprising:\\\\n a sleeve secured to the electrostatic chuck body, the sleeve capturing a projection extending from the porous plug.\",\\n \"c-en-0017\": \"A substrate support pedestal, comprising:\\\\n an electrostatic chuck body bonded to a cooling base via a bond layer, the bond layer having a thickness defining a gap between the electrostatic chuck body and the cooling base, wherein a cavity is formed in a bottom surface of the electrostatic chuck body;\\\\n a porous plug;\\\\n a sleeve disposed around the porous plug; and\\\\n a gas flow passage formed between a top surface of the electrostatic chuck body and a bottom surface of the cooling base, the gas flow passage passing through a hole in the bond layer and the porous plug, the gas flow passage having a swept volume physically shielded from an inside edge of the hole in the bond layer by at least one of the sleeve, a ring extending from one of the electrostatic chuck body and the cooling base, and a ring,\\\\n wherein the porous plug is defined by a top portion having a top diameter and a bottom portion having a bottom diameter,\\\\n wherein the top portion of the porous plug extends into a chuck cavity and the bottom portion extends into a base cavity formed in the top of the cooling base, and wherein the top diameter is larger than the bottom diameter.\",\\n \"c-en-0018\": \"The substrate support pedestal of claim 17, wherein a difference in diameter between the top diameter and the bottom diameter forms an overhang of the porous plug, the overhang is coupled to a sleeve disposed concentrically around the porous plug, and an adhesive layer is formed in between a sidewall of the chuck cavity and the sleeve to couple the porous plug to the electrostatic chuck body.\",\\n \"c-en-0019\": \"A substrate support pedestal, comprising:\\\\n an electrostatic chuck body bonded to a cooling base via a bond layer, the bond layer having a thickness defining a gap between the electrostatic chuck body and the cooling base, wherein the electrostatic chuck body comprises a first chuck cavity formed in a bottom surface of the electrostatic chuck body and a second chuck cavity formed through the first chuck cavity;\\\\n a porous plug, wherein the porous plug has a plug height that is equal to or less than a height of the second chuck cavity and the porous plug does not extend into the first chuck cavity;\\\\n a sleeve disposed around the porous plug, wherein the sleeve does not extend into the cooling base; and\\\\n a gas flow passage formed between a top surface of the electrostatic chuck body and a bottom surface of the cooling base, the gas flow passage passing through a hole in the bond layer and the porous plug, the gas flow passage having a swept volume physically shielded from an inside edge of the hole in the bond layer by at least one of the sleeve, a ring extending from one of the electrostatic chuck body and the cooling base, or a ring.\",\\n \"c-en-0020\": \"The substrate support pedestal of claim 19, wherein the porous plug is coupled to the electrostatic chuck body via at least one of an adhesive layer or via a press fit.\",\\n \"p0001\": \"PRIORITY CLAIM\",\\n \"p0002\": \"This application claims priority to U.S. Provisional App. No. 62/680,224, “Substrate Support Pedestal,” filed Jun. 4, 2018, incorporated by reference in its entirety herein.\",\\n \"p0003\": \"(US20190371578)\",\\n \"p0004\": \"BACKGROUND OF THE DISCLOSURE\",\\n \"p0005\": \"Field of Invention\",\\n \"p0006\": \"The embodiments of the invention generally relate to a substrate support pedestal having a protected bonding layer for use in a substrate process chamber.\",\\n \"p0007\": \"Background of the Invention\",\\n \"p0008\": \"Substrate support pedestal are widely used to support substrates within semiconductor processing systems during processing. A particular type of substrate support pedestal includes a ceramic electrostatic chuck mounted on a cooling base. Electrostatic chucks generally retain the substrate in a stationary position during processing. Electrostatic chucks contain one or more embedded electrodes within a ceramic body. As an electrical potential is applied between the electrodes and a substrate disposed on the ceramic body, an electrostatic attraction is generated which holds the substrate against a support surface of the ceramic body. The force generated may be a capacitive effect due to a potential difference between the substrate and the electrodes or, in the case of ceramic bodies comprised of semiconducting materials having a relatively low resistivity which allow charge migration within the ceramic body to the surface approximate the substrate, a Johnsen-Rahbeck effect. Electrostatic chucks utilizing capacitive and Johnsen-Rahbeck attractive forces are commercially available from a number of sources.\",\\n \"p0009\": \"To control the substrate temperature during processing, a backside gas is provided between the support surface of the ceramic body and the substrate. Generally, the backside gas fills the interstitial area between the ceramic body and the substrate, thus providing a heat transfer medium that enhances the rate of heat transfer between the substrate and the substrate support.\",\\n \"p0010\": \"The bond layer securing the electrostatic chuck to the cooling base is susceptible to erosion by the process gas passing through the bond layer. Additionally, the inventors have discovered that the bond layer may be further eroded if backside gas becomes ignited into a plasma, energized or otherwise facilitates arcing in the portion of the backside gas channel passing through the substrate support pedestal that is exposed to the bond layer. The erosion of bond layer is problematic for at least two reasons. First, material eroded from bond layer is a process contaminant that produces defects and reduces product yields. Secondly, as the hole in the bond layer through which the backside gas passes increases in size, the local rate heat transfer between the electrostatic chuck and cooling base changes as the bond material is replaced by a gap, thereby creating undesirable temperature non-uniformities and process drift.\",\\n \"p0011\": \"Therefore, there is a need for an improved substrate support pedestal.\",\\n \"p0012\": \"Substrate support pedestals having a bond layer shielded from direct exposure to a gas flow path passing through the bond layer are disclosed herein. Since the bond layer is shielded from the direct flow of gas, process or backside, being delivered through the substrate support pedestal via the gas flow path, the bond layer is much less susceptible to erosion which preserves the integrity of the electrostatic chuck assembly.\",\\n \"p0013\": \"In an embodiment, a substrate support pedestal includes: an electrostatic chuck body bonded to a cooling base via a bond layer; a porous plug; and a gas flow passage formed between a top surface of the electrostatic chuck body and a bottom surface of the cooling base. The gas flow passage passes through a hole in the bond layer and the porous plug, the gas flow passage has a swept volume physically shielded from an inside edge of the hole in the bond layer.\",\\n \"p0014\": \"In another embodiment, a substrate support pedestal includes: an electrostatic chuck body bonded to a cooling base via a bond layer, the bond layer having a thickness defining a gap between the electrostatic chuck body and the cooling base, wherein a cavity is formed in a bottom surface of the electrostatic chuck body. The substrate support pedestal further includes a porous plug; a sleeve disposed around the porous plug; and a gas flow passage formed between a top surface of the electrostatic chuck body and a bottom surface of the cooling base. The gas flow passage passes through a hole in the bond layer and the porous plug and has a swept volume physically shielded from an inside edge of the hole in the bond layer by at least one of the sleeve. The substrate support pedestal further includes a ring extending from one of the electrostatic chuck body and the cooling base, and a ring, wherein the porous plug is defined by a top portion having a top diameter and a bottom portion having a bottom diameter. The top portion of the porous plug extends into the chuck cavity and the bottom portion extends into a base cavity formed in the top of the cooling base, and the top diameter of the porous plug is larger than the bottom diameter.\",\\n \"p0015\": \"In another embodiment, a substrate support pedestal includes: an electrostatic chuck body bonded to a cooling base via a bond layer, the bond layer having a thickness defining a gap between the electrostatic chuck body and the cooling base. The electrostatic chuck body includes a first chuck cavity formed in a bottom surface of the electrostatic chuck body and a second chuck cavity formed through the first chuck cavity. The substrate support pedestal further includes a porous plug, wherein the porous plug has a plug height that is equal to or less than a height of the second chuck cavity and the porous plug does not extend into the first chuck cavity. The substrate support pedestal can further include a sleeve disposed around the porous plug, wherein the sleeve does not extend into the cooling base; and a gas flow passage formed between a top surface of the electrostatic chuck body and a bottom surface of the cooling base. The gas flow passage passing through a hole in the bond layer and the porous plug. The gas flow passage has a swept volume physically shielded from an inside edge of the hole in the bond layer by at least one of the sleeve, a ring extending from one of the electrostatic chuck body and the cooling base, or a ring.\",\\n \"p0016\": \"(US20190371578)\",\\n \"p0017\": \"BRIEF DESCRIPTION OF DRAWINGS\",\\n \"p0018\": \"So that the manner in which the above recited features of the present invention are attained and can be understood in detail, a more particular description of the invention, briefly summarized above, may be had by reference to the embodiments thereof which are illustrated in the appended drawings. It is to be noted, however, that the appended drawings illustrate only embodiments of this invention and are therefore not to be considered limiting of its scope, for the invention may admit to other equally effective embodiments.\",\\n \"p0019\": \"FIG. 1 depicts a schematic of a process chamber having one embodiment of substrate support pedestal disposed therein.\",\\n \"p0020\": \"FIG. 2 depicts a partial sectional view of the substrate support pedestal of FIG. 1 illustrating one configuration of the chuck and a gas flow path.\",\\n \"p0021\": \"FIG. 3 is a partial sectional view of a substrate support pedestal and a gas flow path according to certain embodiments of the present disclosure.\",\\n \"p0022\": \"FIG. 4 is a partial sectional view of another substrate support pedestal and a gas flow path according to certain embodiments of the present disclosure.\",\\n \"p0023\": \"FIG. 5 is a partial sectional view of another substrate support pedestal and a gas flow path according to certain embodiments of the present disclosure.\",\\n \"p0024\": \"FIG. 6 is a partial sectional view of another substrate support pedestal and a gas flow path according to certain embodiments of the present disclosure.\",\\n \"p0025\": \"FIG. 7 is a sectional view of another substrate support pedestal and a gas flow path according to certain embodiments of the present disclosure.\",\\n \"p0026\": \"FIG. 8 is a sectional view of another substrate support pedestal and a gas flow path according to certain embodiments of the present disclosure.\",\\n \"p0027\": \"FIG. 9 is a sectional view of yet another substrate support pedestal and a gas flow path according to certain embodiments of the present disclosure.\",\\n \"p0028\": \"(US20190371578)\",\\n \"p0029\": \"DETAILED DESCRIPTION\",\\n \"p0030\": \"To facilitate understanding, identical reference numerals have been used, wherever possible, to designate identical elements that are common to the figures.\",\\n \"p0031\": \"DETAILED DESCRIPTION\",\\n \"p0032\": \"The systems and methods discussed herein employ substrate support pedestal designs that have a cooling base and electrostatic chuck bonded together via a bond layer. The coupling of the cooling base and chuck in combination with a porous plug positioned in between the cooling base and chuck protects forms a gas passage that may be referred to as a gas flow path that extends through the bond layer. The embodiments discussed herein for substrate support pedestal designs shield the bond layer from the gas flow path, thus preventing degradation of the bond layer which can lead to an undesirable temperature profile.\",\\n \"p0033\": \"FIG. 1 depicts a schematic diagram of a process chamber 100 that includes an antenna that can be a coiled antenna. In one example, the process chamber 100 includes at least a first antenna segment 112A and a second antenna segment 112B, both positioned exterior to a dielectric, ceiling 120. The first antenna segment 112A and the second antenna segment 112B are each coupled to a first radio-frequency (RF) source 118 that is generally capable of producing an RF signal. The first RF source 118 is coupled to the first antenna segment 112A and to the second antenna segment 112B through a matching network 119. Process chamber 100 also includes a substrate support pedestal 116 that is coupled to a second RF source 122 that is generally capable of producing an RF signal. The second RF source 122 is coupled to the substrate support pedestal 116 through a matching network 124. The process chamber 100 also contains a chamber wall 130 that is conductive and that is electrically connected to an electrical ground 134. A controller 140 that includes a central processing unit (CPU) 144, a memory 142, and support circuits 146 for the CPU 144 is coupled to the various components of the process chamber 100 to facilitate control of the etch process.\",\\n \"p0034\": \"In operation, the semiconductor substrate 114 is placed on the substrate support pedestal 116 and gaseous components are supplied from a gas panel 138 to the process chamber 100 through entry ports 126 to form a gaseous mixture in a processing space 150. The gaseous mixture in the processing space 150 is ignited into a plasma in the process chamber 100 by applying RF power from the first 118 and second 122 RF sources respectively to the first antennae segment 112A and the second antennae segment 112B and further to the substrate support pedestal 116. The pressure within the interior of the process chamber 100 is controlled using a throttle valve 127 situated between the process chamber 100 and a vacuum pump 136. The temperature at the surface of the chamber walls 130 is controlled using liquid-containing conduits (not shown) that are located in the chamber walls 130 of the process chamber 100. Chemically reactive ions are released from the plasma and strike the substrate; thereby removing exposed material from the substrate\\'s surface.\",\\n \"p0035\": \"The substrate support pedestal 116 includes an electrostatic chuck 102 positioned on a cooling base 104, which may be referred to in various embodiments as a cooling base 104. The temperature of the semiconductor substrate 114 is controlled by stabilizing the temperature of the electrostatic chuck 102 and flowing helium or other gas from a gas source 148 to a plenum defined between the semiconductor substrate 114 and a support surface 106 of the electrostatic chuck 102. The helium gas is used to facilitate heat transfer between the semiconductor substrate 114 and the substrate support pedestal 116. During the etch process, the semiconductor substrate 114 is gradually heated by the plasma to a steady state temperature. Using thermal control of both the ceiling 120 and the substrate support pedestal 116, the semiconductor substrate 114 is maintained at a predetermined temperature during processing.\",\\n \"p0036\": \"FIG. 2 depicts a vertical cross-sectional view of a first embodiment of the substrate support pedestal 116. The substrate support pedestal 116 is generally supported above the bottom of the process chamber 100 by a base 202 coupled to the cooling base 104 is adhered to the electrostatic stuck by a bond layer 204, a chuck-base bond layer. The substrate support pedestal 116 is fastened to the base 202 such that the substrate support pedestal 116 can be removed from the base 202, refurbished, and re-fastened to the base 202. The base 202 is sealed to the cooling base 104 to isolate various conduits and electrical leads positioned therein from the process environment within the process chamber 100.\",\\n \"p0037\": \"The cooling base 104 is generally fabricated from a metallic material such as stainless steel, aluminum, aluminum alloys, among other suitable materials. The cooling base 104 includes one or more passages 212 positioned therein that circulate a heat transfer fluid to maintain thermal control of the substrate support pedestal 116. As discussed above, the cooling base 104 is adhered to the electrostatic chuck 102 by the bond layer 204. The bond layer 204 includes one or more materials such as an adhesive of an acrylic or silicon-based adhesive, epoxy, neoprene, an optically clear adhesive such as a clear acrylic adhesive, or other suitable adhesives.\",\\n \"p0038\": \"The electrostatic chuck 102 is generally circular in form but may alternatively take the form of other geometries to accommodate non-circular substrates, for example, square or rectangular substrate such as flat panels. The electrostatic chuck 102 generally includes one or more electrodes 208 embedded within a chuck body 206. The electrodes 208 are formed from an electrically conductive material such as copper, graphite, tungsten, molybdenum and the like. Various embodiments of electrode structures include, but are not limited to, a pair of coplanar D-shaped electrodes, coplanar interdigital electrodes, a plurality of coaxial annular electrodes, a singular, circular electrode or other structure. The electrodes 208 are coupled to the second RF source 122 by a feed through 252 positioned in the substrate support pedestal 116.\",\\n \"p0039\": \"The chuck body 206 is fabricated from ceramic. In one embodiment, the chuck body 206 is fabricated from a low resistivity ceramic material (i.e., a material having a resistivity between about 1×E9 to about 1×E11 ohm-cm). Examples of low resistivity materials include doped ceramics such as alumina doped with titanium oxide or chromium oxide, doped aluminum oxide, doped boron-nitride and the like. Other materials of comparable resistivity, for example, aluminum nitride, may also be used. Such ceramic materials having relatively low resistivity generally promote a Johnsen-Rahbek attractive force between the substrate and electrostatic chuck 102 when power is applied to the electrodes 208. Alternatively, chuck body 206 including ceramic materials having a resistivity equal to or greater than 1E×11 ohms-cm may also be used.\",\\n \"p0040\": \"In the embodiment depicted in FIG. 2, the support surface 106 of the chuck body 206 includes a plurality of mesas 216 formed inwards of a seal ring 240 formed on the support surface 106. In one example, the seal ring 240 is formed of the same material comprising the chuck body 206. In another example, the seal ring 240 may alternatively be formed from other dielectric materials. The mesas 216 are generally formed from one or more layers of an electrically insulating material having a dielectric constant in the range of about 5 to about 10. Examples of such insulating materials include, but are not limited to, silicon nitride, silicon dioxide, aluminum oxide, tantalum pentoxide, polyimide and the like. Alternatively, the mesas 216 may be formed from the same material as the chuck body and then coated with a high resistivity dielectric film.\",\\n \"p0041\": \"In an embodiment of the electrostatic chuck 102 utilizing the Johnson-Rahbeck effect, the chuck body 206 can be formed at least in part from ceramic materials. The chuck body 206 is partially conductive due to the relatively low resistivity of the ceramic materials, thus allowing charges to migrate from the electrodes 208 to the support surface 106 of the chuck body 206. Similarly, charges migrate through the semiconductor substrate 114 and accumulate on the semiconductor substrate 114. The insulating material that the mesas 216 are formed from and/or coated with prevents current flow therethrough. Since each of the mesas 216 has a significantly higher resistivity (i.e. lower dielectric constant) than the chuck body 206, the migrating charges accumulate proximate each of the mesas 216 on the support surface 106 of the electrostatic chuck 102. Although charges also migrate to the portions of the support surface 106 between mesas 216, the dielectric constant of the mesa 216 is substantially greater than the dielectric constant of the backside gas between the backside of the semiconductor substrate 114 and the chuck body surface. This difference in dielectric constant results in the electric field being substantially greater at each mesa 216 than at locations alongside the mesas. Consequently, the clamping force is greatest at each mesa 216 and the invention enables the clamping force to be strictly controlled by placement of the mesas to achieve a uniform charge distribution across the backside of the substrate.\",\\n \"p0042\": \"To promote a uniform temperature across a substrate that is retained by the electrostatic chuck, gas (e.g., helium, nitrogen or argon) provided by the gas source 148 is introduced to a plenum 280 defined inward of the seal ring 240 between the support surface 106 of the electrostatic chuck 102 and the semiconductor substrate 114 to provide a heat transfer medium therebetween. The backside gas is generally applied to the plenum 280 through one or more gas flow passages 270 formed through the chuck body 206 and the cooling base 104. Each gas flow passage 270 terminates at an outlet 210 formed through the support surface 238 of the chuck body 206.\",\\n \"p0043\": \"The gas flow passage 270 includes a first portion 270A and a second 270B portion. The gas flow passage 270 extends from a top surface of the chuck body 206, the top surface indicated by the outlet 210, from a bottom surface 284 of the cooling base 104. The first portion 270A of the gas flow passage 270 is formed through the chuck body 206. The first portion 270A includes a first chuck passage 248 and a second chuck passage 254. The first chuck passage 248 terminates at one end at the outlet 210 and couples with the second chuck passage 254 at the opposite end. The second chuck passage 254 exits a bottom surface 222 of the chuck body 206. The second chuck passage 254 generally has a sectional area, such as a diameter, that is greater than a sectional area of the first chuck passage 248.\",\\n \"p0044\": \"The second portion 270B of the gas flow passage 270 is formed through the cooling base 104. The second portion 270B includes a first base passage 256 and a second base passage 258. The first base passage 256 is coupled at one end to a common port 272. The common port 272 provides an inlet of the gas flow passage 270. The common port 272 is formed in the cooling base 104 and couples with the second base passage 258 at the opposite end. The common port 272 is coupled to the gas source 148. In one example, all gas flow passages 270 are coupled to the gas source 148 through a single common port 272. Alternatively, each gas flow passage 270 may be individually coupled to the gas source 148 through separate common ports 272. The second base passage 258 exits a top of the cooling base 104 and is aligned with the second chuck passage 254 exiting the bottom surface 222 of the chuck body 206. In one example, the second base passage 258 is co-linear with the second chuck passage 254, or in other words, the second base passage 258 and the second chuck passage 254 share a common central axis. The second base passage 258 generally has a sectional area, such as a diameter, that is greater than a sectional area of the first base passage 256.\",\\n \"p0045\": \"A porous plug 244 is generally positioned in the gas flow passage 270 between the chuck body 206 and the cooling base 104 such that it forms a part of the gas flow passage 270. The porous plug 244 is generally formed from a ceramic material such as aluminum oxide or aluminum nitride. In one embodiment, the porous plug 244 has a porosity of about 30 to about 80 percent. The porous plug 244 may be positioned in the chuck body 206 in various configurations.\",\\n \"p0046\": \"The gas flow passage 270 is configured to shield the bond layer 204 securing the chuck body 206 to the cooling base 104. Various configurations of electrostatic chuck assemblies that include the gas flow passages 270 are discussed in at least FIGS. 3-9 below. The bond layer 204 separates the chuck body 206 from the cooling base 104. A hole 204A in the bond layer 204 has an inner edge 204B surrounding the gas flow passage 270 forming a gap 260 between the chuck body 206 from the cooling base 104 across which gas flows while passing through the gas flow passage 270 between the common port 272 and the outlet 210. Within the gap 260, a swept volume region 262 is defined vertically in-line with the porous plug 244 and the second base passage 258. Essentially all of the gas (e.g., the swept volume) within swept volume region 262 flows through the porous plug 244 positioned in the gas flow passage 270 and out the outlet 210. The swept volume region 262 therefore includes the first portion 270A, the second portion 270B, the porous plug 244, and the portion of the gap 260 vertically aligned between the bottom of the porous plug 244 and the second base passage 258.\",\\n \"p0047\": \"In the example depicted in FIG. 2, the porous plug 244 is positioned in the second base passage 258 from the bottom surface 222 of the chuck body 206. The porous plug 244 abuts a step 250 defined in the first portion 270A of the gas flow passage 270 where the first chuck passage 248 meets the second chuck passage 254. The porous plug 244 may be held in place in the chuck body 206 by various techniques. These techniques may include press fit, retaining ring, bonding and pinning, among others, including hot pressing or sintering the porous plug 244 into a singular body with the chuck body 206.\",\\n \"p0048\": \"In some embodiments, a sleeve 276 is positioned in the second chuck passage 254 between the porous plug 244 and the chuck body 206. The sleeve 276 may be coupled to the porous plug 244 and the chuck body 206 using various techniques, such as press fit, pinning, and bonding, among others. In the example depicted in FIG. 2, the sleeve 276 is press fit with the porous plug 244 while the sleeve 276 is bonded to the chuck body 206 using an adhesive layer 274. In another example, the sleeve 276 is press fit or otherwise mechanically secured to both the porous plug 244 and the chuck body without use of an adhesive. In other examples, the adhesive layer 274 is used without a sleeve to couple the porous plug 244 directly to the chuck body 206. In other examples, the sleeve 276 is press fit with the chuck body 206 while the sleeve 276 is bonded to the porous plug 244 using the adhesive layer 274 to couple the porous plug 244 to the chuck body 206.\",\\n \"p0049\": \"Generally, the porous plug 244 prevents arcing and plasma ignition of the backside gas during processing and plasma cleaning by blocking a direct current path through the backside gas between the substrate and portions of the electrostatic chuck 102. The direct current patch is blocked in the first portion 270A of the gas flow passage 270 proximate the electrodes 208 while minimizing the surface area available for charge accumulation adjacent the backside gas flow path.\",\\n \"p0050\": \"FIG. 3 is a partial sectional view of the substrate support pedestal 116 of FIG. 2. The second chuck passage 254 formed in the chuck body 206 defines a chuck cavity 348 having a top cavity surface 302, a width 330, and sidewalls 304. The second base passage 258 formed in the cooling base 104 defines a base cavity 360 having a bottom cavity surface 366, a width 362, and sidewalls 364, as shown in the enlarged inset of FIG. 3. The width 330 of the chuck cavity 348 may be substantially equal to the width 362 of the base cavity 360. The porous plug 244 is seated in the chuck cavity 348 formed in the chuck body 206. A portion of the porous plug 244 also extends into the base cavity 360. Alternatively, the porous plug 244 may reside in its entirety in only one of the cavities 348, 360. The porous plug 244 is defined in part by a height 334. In one example, the height 334 is greater than an overall cavity height 332 of the chuck cavity 348. The porous plug 244 includes a width 314 (shown in the enlarged inset in FIG. 3) measured parallel to a first axis 328 and perpendicular to a second axis 326 that is perpendicular to the first axis 328. The first axis 328 is also the centerline of the gas flow passage 270, while the second axis 326 is parallel with the bottom surface 222 of the chuck body 206.\",\\n \"p0051\": \"As shown in FIG. 3, the sleeve 276 is disposed concentrically around the porous plug 244. The sleeve 276 bridges the gap 260 defined between the cooling base 104 and the chuck body 206. By spanning the gap 260, the sleeve 276 physically shields the bond layer 204 from the porous plug 244, and thus, effectively shields the bond layer 204 from the gases flowing through the gas flow passage 270. According, gases flowing through the gas flow passage 270 do not erode the bond layer 204, beneficially extending the life of the substrate support pedestal 116, while advantageously preventing drift in the temperature profile of the electrostatic chuck 102 due to changes in the amount of bond material included in the bond layer 204.\",\\n \"p0052\": \"In an example, there is a space between the bottom cavity surface 366 of the base cavity 360 and a bottom surface 320 of the porous plug 244. A first top surface 316 and the bottom surface 320 of the porous plug 244 are parallel to the second axis 328. The first top surface 316 is separated from the bottom surface 320 by a height 334 that defines the length of the porous plug 244. The height 334 of the porous plug 244 is less than a sum of the depths of the cavities 348, 360. The sleeve 276 has a length 346 that is sufficient to bridge the gap 260. Depending upon the example, the length 346 of the sleeve 276 can be less than, equal to or greater than the height 334, but less than a sum of the depths of the cavities 348, 360. In one example, which can be combined with other examples herein, a difference in height between the sleeve 276 and the adhesive layer 274 securing the sleeve 276 to the chuck body 206 is such that the length 346 of the sleeve 276 exceeds a length of the adhesive layer 274.\",\\n \"p0053\": \"In an embodiment, the porous plug 244 is not in direct contact with the bottom cavity surface 366 of the base cavity 360 formed in the cooling base 104. Thus, a gap (not labeled with a reference numeral) is formed that efficiently allows gas flowing out of the first base passage 256 to enter the porous plug 244 and continue into the first portion 270A of the gas flow passage 270. The gas flowing out of the first base passage 256 eventually flows out of the outlet 210, shown in the enlarged inset of FIG. 3, and into the plenum 280 (shown in FIG. 2).\",\\n \"p0054\": \"The sleeve 276 also functions to create a dead volume 352 (shown in the enlarged view inset in FIG. 3) between the sleeve 276 and the inner edge 204B of the bond layer 204 surrounding the gas flow passage 270. The dead volume 352 is upswept by the gas flowing through the gas flow passage 270. Since the upswept gas residing in the dead volume 352 has little to no kinetic energy as compared to the gas flowing through the gas flow passage 270, the inner edge of the bond layer 204 is beneficially subjected to little to no erosion due to interaction with flowing gas.\",\\n \"p0055\": \"Alternative configurations for securing the porous plug 244 that may be utilized in the substrate support pedestal 116 and process chamber 100 depicted in FIG. 2 are illustrated in FIGS. 4-9. The examples depicted in FIGS. 4-9 all physically shield the bond layer 204 from gases flowing through the pedestal, thereby extending the service life of the pedestal while reducing the potential for contamination while processing substrates.\",\\n \"p0056\": \"FIG. 4 is a partial sectional view of a substrate support pedestal 400 according to certain embodiments of the present disclosure. The substrate support pedestal 400 is essentially the same as the substrate support pedestal 116 described above, except for the details of how the porous plug 244 is secured with the gas flow passage 270. As shown in FIG. 4, the substrate support pedestal 400 includes a chuck body 418. The chuck body 418 is essentially the same of the chuck body 206 described above, except that the chuck body 418 includes a ring 402 extending from the bottom surface 222 of the chuck body 418. In the example of FIG. 4, the ring 402 is in the form of a boss extending from the chuck body 418. The ring 402 has a height 404 and a width 308. The second chuck passage 254 formed in the chuck body 206 defines a chuck cavity 348 having a top cavity surface 302, a width 410, and sidewall 422. The second chuck passage 254 extends through the ring 402, and as such, at least a portion of the chuck cavity 348 resides within the ring 402.\",\\n \"p0057\": \"The ring 402 extends from the bottom surface 222 to a height 404. The height 404 is greater than the distance across the gap 260 (shown in the enlarged inset of FIG. 4) defined between the chuck body 206 and t(...)\"\\n }\\n },\\n \"US20200373184\": {\\n \"Patent Num\": \"US20200373184\",\\n \"Content\": {\\n \"title\": \"Substrate support carrier with improved bond layer protection\",\\n \"pa01\": \"A substrate support pedestal comprises an electrostatic chuck, a cooling base, a gas flow passage, a porous plug, and a sealing member. The electrostatic chuck comprises body having a cavity. The cooling base is coupled to the electrostatic chuck via a bond layer. The gas flow passage is formed between a top surface of the electrostatic chuck and a bottom surface of the cooling base. The gas flow passage further comprises the cavity. The porous plug is positioned within the cavity to control the flow of gas through the gas flow passage. The sealing member is positioned adjacent to the porous plug and is configured to form one or more of a radial seal between the porous plug and the cavity and an axial seal between the porous plug and the cooling base.\",\\n \"c-en-0001\": \"An electrostatic chuck comprising:\\\\n a body comprising:\\\\n a top surface; and\\\\n a cavity;\\\\n a gas flow passage formed between the top surface and the cavity; and\\\\n a porous plug positioned within the cavity, wherein a sealing member is positioned adjacent to the porous plug and is configured to form one or more of a radial seal between the porous plug and the cavity and an axial seal between the porous plug and a cooling base bonded to the electrostatic chuck.\",\\n \"c-en-0002\": \"The electrostatic chuck of claim 1, wherein the sealing member is positioned between the porous plug and a sidewall of the cavity.\",\\n \"c-en-0003\": \"The electrostatic chuck of claim 1, wherein the sealing member is positioned between the porous plug and the cooling base.\",\\n \"c-en-0004\": \"The electrostatic chuck of claim 1, wherein the sealing member secures the porous plug within the cavity.\",\\n \"c-en-0005\": \"The electrostatic chuck of claim 1, wherein the sealing member is an O-ring or a cylindrical gasket.\",\\n \"c-en-0006\": \"The electrostatic chuck of claim 1, wherein the sealing member is one of a fluoroelastomer material, perfluoroelastomer material, and a high purity ceramic.\",\\n \"c-en-0007\": \"The electrostatic chuck of claim 6, wherein the sealing member is formed from material applied in a liquid, paste or gel form.\",\\n \"c-en-0008\": \"The electrostatic chuck of claim 1, wherein the porous plug has one of a t-shape and a cylindrical shape.\",\\n \"c-en-0009\": \"A substrate support pedestal comprising:\\\\n an electrostatic chuck having a body comprising a cavity;\\\\n a cooling base coupled to the electrostatic chuck via a bond layer;\\\\n a gas flow passage formed between a top surface of the electrostatic chuck and a bottom surface of the cooling base, the gas flow passage including the cavity;\\\\n a porous plug positioned within the cavity; and\\\\n a sealing member positioned adjacent to the porous plug and configured to form one or more of a radial seal between the porous plug and the cavity and an axial seal between the porous plug and the cooling base.\",\\n \"c-en-0010\": \"The substrate support pedestal of claim 9, wherein the sealing member is positioned between the porous plug and a sidewall of the cavity.\",\\n \"c-en-0011\": \"The substrate support pedestal of claim 9, wherein the sealing member is positioned between the porous plug and the cooling base.\",\\n \"c-en-0012\": \"The substrate support pedestal of claim 9, wherein the sealing member secures the porous plug in the cavity.\",\\n \"c-en-0013\": \"The substrate support pedestal of claim 9, wherein the cooling base includes a groove and the sealing member is positioned within the groove.\",\\n \"c-en-0014\": \"The substrate support pedestal of claim 9, wherein the sealing member is an O-ring or a cylindrical gasket.\",\\n \"c-en-0015\": \"The substrate support pedestal of claim 9, wherein the sealing member is one of a fluoroelastomer material, perfluoroelastomer material, and a high purity ceramic.\",\\n \"c-en-0016\": \"The substrate support pedestal of claim 9, wherein the porous plug has a t-shape or a cylindrical shape.\",\\n \"c-en-0017\": \"A process chamber comprising:\\\\n a chamber body having a processing volume:\\\\n an electrostatic chuck disposed in the processing volume, the electrostatic chuck having a top surface configured to support a substrate during processing, a bottom surface, and a cavity;\\\\n a cooling base coupled to the electrostatic chuck via a bond layer;\\\\n a gas flow passage formed between the top surface of the electrostatic chuck and a bottom surface of the cooling base, the gas flow passage passing through the cavity;\\\\n a porous plug positioned within the cavity; and\\\\n a sealing member positioned adjacent to the porous plug and configured to form one or more of a radial seal between the porous plug and the cavity and an axial seal between the porous plug and the cooling base.\",\\n \"c-en-0018\": \"The process chamber of claim 17, wherein the sealing member is positioned between the porous plug and a sidewall of the cavity.\",\\n \"c-en-0019\": \"The process chamber of claim 17, wherein the sealing member is positioned between the porous plug and the cooling base.\",\\n \"c-en-0020\": \"The process chamber of claim 17, wherein the cooling base includes a groove and the sealing member is positioned within the groove.\",\\n \"p0001\": \"CROSS-REFERENCE TO RELATED APPLICATIONS\",\\n \"p0002\": \"This application claims priority to U.S. Provisional Patent Application 62/852,843, filed on May 24, 2019, the disclosure of which is incorporated herein by reference in its entirety.\",\\n \"p0003\": \"(US20200373184)\",\\n \"p0004\": \"BACKGROUND\",\\n \"p0005\": \"Field\",\\n \"p0006\": \"The embodiments of the disclosure generally relate to a substrate support pedestal having a protected bond layer for use in a substrate process chamber.\",\\n \"p0007\": \"Description of the Related Art\",\\n \"p0008\": \"Substrate support pedestals are widely used to support substrates within semiconductor processing systems during substrate processing. The substrate support pedestals generally include an electrostatic chuck bonded to a cooling base with a bond layer. An electrostatic chuck generally includes one or more embedded electrodes which are driven to an electrical potential to hold a substrate against the electrostatic chuck during processing. The cooling base typically includes one or more cooling channels and aids in controlling the temperature of the substrate during processing. Further, the electrostatic chuck may include one or more gas flow passages that allow a gas to flow between the electrostatic chuck and the substrate to assist in controlling the temperature of the substrate during process. The gas fills the area between the electrostatic chuck and the substrate, enhancing the heat transfer rate between the substrate and the substrate support. However, when a substrate is not present, the gas flow passages also provide a path for the process gases to flow into the area between the electrostatic chuck and the cooling base where the bond layer is located. Consequently, the bond layer is eroded by the process gases.\",\\n \"p0009\": \"The erosion of bond layer is problematic for at least two reasons. First, material eroded from bond layer is a process contaminant that produces defects and reduces product yields. Secondly, as the bond layer is eroded, the local rate heat transfer between the electrostatic chuck and cooling base changes, thereby creating undesirable temperature non-uniformities on the substrate and process drift.\",\\n \"p0010\": \"Therefore, there is a need for an improved substrate support pedestal.\",\\n \"p0011\": \"SUMMARY OF THE DISCLOSURE\",\\n \"p0012\": \"In one example, an electrostatic chuck has a body comprising a top surface, a cavity, a gas flow passage, and a porous plug. The gas flow passage is formed between the top surface and the cavity. The porous plug is positioned within the cavity. A sealing member is positioned adjacent to the porous plug and is configured to form one or more of a radial seal between the porous plug and the cavity and an axial seal between the porous plug and a cooling base bonded to the electrostatic chuck.\",\\n \"p0013\": \"In one example, a substrate support pedestal is provided that includes an electrostatic chuck, a cooling base, a gas flow passage, a porous plug, and a sealing member. The electrostatic chuck having a body comprising a cavity. The cooling base is coupled to the electrostatic chuck via a bond layer. The gas flow passage is formed between a top surface of the electrostatic chuck and a bottom surface of the cooling base. The gas flow passage further includes the cavity. The porous plug is positioned within the cavity. The sealing member is positioned adjacent to the porous plug and is configured to form one or more of a radial seal between the porous plug and the cavity and an axial seal between the porous plug and the cooling base.\",\\n \"p0014\": \"In one example, a process chamber comprises a chamber body, an electrostatic chuck, a cooling base, a gas flow passage, a porous plug and a sealing member. The chamber body has a processing volume. The electrostatic chuck is disposed in the processing volume and has a top surface configured to support a substrate during processing. The electrostatic chuck further comprises a bottom surface and a cavity. The cooling base is coupled to the electrostatic chuck via a bond layer. The gas flow passage is formed between the top surface of the electrostatic chuck and a bottom surface of the cooling base. Further, the gas flow passage passes through the cavity. The porous plug is positioned within the cavity. The sealing member is positioned adjacent to the porous plug and is configured to form one or more of a radial seal between the porous plug and the cavity and an axial seal between the porous plug and the cooling base.\",\\n \"p0015\": \"(US20200373184)\",\\n \"p0016\": \"BRIEF DESCRIPTION OF DRAWINGS\",\\n \"p0017\": \"So that the manner in which the above recited features of the present disclosure are attained and can be understood in detail, a more particular description of the disclosure, briefly summarized above, may be had by reference to the embodiments thereof which are illustrated in the appended drawings. It is to be noted, however, that the appended drawings illustrate only embodiments of this disclosure and are therefore not to be considered limiting of its scope, for the disclosure may admit to other equally effective embodiments.\",\\n \"p0018\": \"FIG. 1 depicts a schematic of a process chamber having a substrate support pedestal, according to one or more embodiments.\",\\n \"p0019\": \"FIG. 2 depicts a partial sectional view of the substrate support pedestal, according to one or more embodiments.\",\\n \"p0020\": \"FIGS. 3, 4, 5, 6, 7, 8 and 9 are partial sectional views of the substrate support pedestal, according to one or more embodiments.\",\\n \"p0021\": \"To facilitate understanding, identical reference numerals have been used, wherever possible, to designate identical elements that are common to the figures.\",\\n \"p0022\": \"(US20200373184)\",\\n \"p0023\": \"DETAILED DESCRIPTION\",\\n \"p0024\": \"The systems and methods discussed herein employ substrate support pedestals that have a cooling base and electrostatic chuck bonded together via a bond layer. A porous plug is positioned in a gas flow passage formed in the cooling base and the electrostatic chuck. The restriction of the porous plug protects the bond layer from the process gases utilized during substrate processing. Advantageously, the following embodiments discuss improved techniques for securing the porous plug within the gas flow passage to prevent degradation of the bond layer through the utilization of a radial seal that substantially prevents gas flowing around the porous plug.\",\\n \"p0025\": \"FIG. 1 depicts a schematic diagram of a process chamber 100, according to one or more embodiments. The process chamber 100 includes at least an inductive coil antenna segment 112A and a conductive coil antenna segment 112B, both positioned exterior to a dielectric, ceiling 120. The inductive coil antenna segment 112A and the conductive coil antenna segment 112B are each coupled to a radio-frequency (RF) source 118 that produces an RF signal. The RF source 118 is coupled to the inductive coil antenna segment 112A and to the conductive coil antenna segment 1126 through a matching network 119. Process chamber 100 also includes a substrate support pedestal 116 that is coupled to an RF source 122 that produces an RF signal. The RF source 122 is coupled to the substrate support pedestal 116 through a matching network 124. The process chamber 100 also includes a chamber wall 130 that is conductive and connected to an electrical ground 134.\",\\n \"p0026\": \"A controller 140 comprising a central processing unit (CPU) 144, a memory 142, and support circuits 146. The controller 140 is coupled to the various components of the process chamber 100 to facilitate control of the substrate processing process.\",\\n \"p0027\": \"In operation, the semiconductor substrate 114 is placed on the substrate support pedestal 116 and gaseous components are supplied from a gas panel 138 to the process chamber 100 through entry ports 126 to form a gaseous mixture in a processing volume 150 of the process chamber 100. The gaseous mixture in the processing volume 150 is ignited into a plasma in the process chamber 100 by applying RF power from the RF sources 118, 122 respectively to the inductive coil antenna segment 112A, the conductive coil antenna segment 112B and to the substrate support pedestal 116. Additionally, chemically reactive ions are released from the plasma and strike the substrate; thereby removing exposed material from the substrate\\'s surface.\",\\n \"p0028\": \"The pressure within the interior of the process chamber 100 is controlled using a throttle valve 127 situated between the process chamber 100 and a vacuum pump 136. The temperature at the surface of the chamber walls 130 is controlled using liquid-containing conduits (not shown) that are located in the chamber walls 130 of the process chamber 100.\",\\n \"p0029\": \"The substrate support pedestal 116 comprises an electrostatic chuck 102 disposed on a cooling base 104. The substrate support pedestal 116 is generally supported above the bottom of the process chamber 100 by a shaft 107 coupled to the cooling base 104. The substrate support pedestal 116 is fastened to the shaft 107 such that the substrate support pedestal 116 can be removed from the shaft 107, refurbished, and re-fastened to the shaft 107. The shaft 107 is sealed to the cooling base 104 to isolate various conduits and electrical leads disposed therein from the process environment within the process chamber 100. Alternatively, the electrostatic chuck 102 and cooling base 104 maybe disposed on an insulating plate that is attached to a ground plate or chassis. Further, the ground plate may be attached to one or more of the chamber walls 130.\",\\n \"p0030\": \"The temperature of the semiconductor substrate 114 is controlled by stabilizing the temperature of the electrostatic chuck 102. For example, a backside gas (e.g., helium or other gas) may be provided by a gas source 148 to a plenum defined between the semiconductor substrate 114 and a support surface 106 of the electrostatic chuck 102. The backside gas is used to facilitate heat transfer between the semiconductor substrate 114 and the substrate support pedestal 116 to control the temperature of the substrate 114 during processing. The electrostatic chuck 102 may include one or more heaters. For example, the heaters may be electrical heaters or the like.\",\\n \"p0031\": \"FIG. 2 depicts a vertical cross-sectional view of a portion of the substrate support pedestal 116 depicted in FIG. 1, according to one or more embodiments. As is discussed above the substrate support pedestal 116 has the cooling base 104 secured to the electrostatic chuck 102. In the example depicted in FIG. 2, the cooling base 104 is secured to the electrostatic chuck 102 by a bond layer 204.\",\\n \"p0032\": \"The bond layer 204 comprises one or more materials such as an acrylic or silicon-based adhesive, epoxy, neoprene based adhesive, an optically clear adhesive such as a clear acrylic adhesive, or other suitable adhesive materials.\",\\n \"p0033\": \"The cooling base 104 is generally fabricated from a metallic material such as stainless steel, aluminum, aluminum alloys, among other suitable materials. Further, the cooling base 104 includes one or more cooling channels 212 disposed therein that circulate a heat transfer fluid to maintain thermal control of the substrate support pedestal 116 and the substrate 114.\",\\n \"p0034\": \"The electrostatic chuck 102 is generally circular in form but may alternatively comprise other geometries to accommodate non-circular substrates. For example, the electrostatic chuck 102 may comprise a square or rectangular substrate when used in processing display glass, such as such as glass for flat panels displays. The electrostatic chuck 102 generally includes a body 206 including one or more electrodes 208. The electrodes 208 are comprised of an electrically conductive material such as copper, graphite, tungsten, molybdenum and the like. Various embodiments of electrode structures include, but are not limited to, a pair of coplanar D-shaped electrodes, coplanar interdigital electrodes, a plurality of coaxial annular electrodes, a singular, circular electrode or other structure. The electrodes 208 are coupled to a power supply 125 by a feed through 209 disposed in the substrate support pedestal 116. The power supply 125 may drive the electrode 208 with a positive or negative voltage. For example, the power supply 125 may drive the electrode 208 with a voltage of about −1000 volts or a voltage of about 2500 volts. Alternatively, other negative voltages or other positive voltages may be utilized.\",\\n \"p0035\": \"The body 206 of the electrostatic chuck 102 may be fabricated from a ceramic material. For example, the body 206 of the electrostatic chuck 102 may be fabricated from a low resistivity ceramic material (i.e., a material having a resistivity between about 133 E9 to about 1×E11 ohm-cm). Examples of low resistivity materials include doped ceramics such as alumina doped with titanium oxide or chromium oxide, doped aluminum oxide, doped boron-nitride and the like. Other materials of comparable resistivity, for example, aluminum nitride, may also be used. Such ceramic materials having relatively low resistivity generally promote a Johnsen-Rahbek attractive force between the substrate and electrostatic chuck 102 when power is applied to the electrodes 208. Alternatively, a body 206 comprising ceramic materials having a resistivity equal to or greater than 1Ex11 ohms-cm may also be used. Further, the body 206 of the electrostatic chuck 102 may be fabricated from an aluminum oxide.\",\\n \"p0036\": \"The support surface 106 of the body 206 includes a plurality of mesas 216 disposed inwards of a seal ring (not shown) formed on the support surface 106. The seal ring is comprised of the same material comprising the body 206 but may alternatively be comprised of other dielectric materials. The mesas 216 are generally formed from one or more layers of an electrically insulating material having a dielectric constant in the range of about 5 to about 10. Examples of such insulating materials include, but are not limited to, silicon nitride, silicon dioxide, aluminum oxide, tantalum pentoxide, polyimide and the like. Alternatively, the mesas 216 may be formed from the same material as the body 206 and then coated with a high resistivity dielectric film.\",\\n \"p0037\": \"During operation, an electrical field generated by driving the electrodes 208 holds the substrate 114 on the support surface 106 with a clamping force. The clamping force is greatest at each mesa 216. Further, the mesas 216 may be positioned and/or sized to achieve a uniform charge distribution across the backside of the substrate.\",\\n \"p0038\": \"A backside gas (e.g., helium, nitrogen or argon) is introduced to a plenum 280 by the gas source 148 to aid in the control the temperature across the substrate 114 when it is retained by the electrostatic chuck 102. The plenum 280 is defined between the support surface 106 of the electrostatic chuck 102 and the substrate 114. Further, the backside gas within the plenum 280 provides a heat transfer medium between the electrostatic chuck 102 and the substrate 114. The backside gas is generally provided to the plenum 280 through one or more gas flow passages 270 formed through the body 206 and the cooling base 104. Further, each gas flow passage 270 terminates at a corresponding opening 210 formed through the support surface 106 of the body 206.\",\\n \"p0039\": \"The gas flow passage 270 extends from the support surface 106 of the body 206 to a bottom surface 284 of the cooling base 104. The gas flow passage 270 includes the opening 210 in the electrostatic chuck 102, an opening 209 in the cooling base 104, and a cavity 211 formed in the body 206 of the electrostatic chuck 102. The cavity 211 may have a sectional area, such as a diameter, that is greater than a sectional area of at least one of the opening 210 and the opening 209. The opening 209 may have a diameter that is greater than, less than or equal to the diameter of the opening 210. Further, while a single gas flow passage 270 is illustrated in FIG. 2, the substrate support pedestal 116 may include multiple gas flow passages.\",\\n \"p0040\": \"The gas flow passage 270 is coupled to the gas source 148. Additionally, each of gas flow passage 270 may be coupled to the gas source 148 through a single port 272. Alternatively, each gas flow passage 270 may be individually coupled to the gas source 148 through separate ports 272.\",\\n \"p0041\": \"A porous plug 244 is generally disposed within the gas flow passage 270 (within the cavity 211) such that it forms a part of the gas flow passage 270. The porous plug 244 provides a path for pressurized gas to flow between two surfaces of different electrical potential. For example, the porous plug 244 provides a path for pressurized gas to flow between a first and second surface of the electrostatic chuck 102, and between a first surface of the electrostatic chuck 102 and a first surface of the cooling base 104. Further, the porous plug 244 comprises a plurality of small passage ways which reduce the probability that plasma will ignite in the gap 204A between the electrostatic chuck 102 and the cooling base 104 as compared to a design not including the porous plug 244. The porous plug 244 is generally comprised of a ceramic material such as aluminum oxide or aluminum nitride. Alternatively, the porous plug 244 may be comprised of other porous materials. Further, the porous plug 244 may have a porosity of about 30 to about 80 percent. Alternatively, the porous plug may have a porosity of less than 30 percent or greater than 80 percent. Additionally, the porous plug 244 abuts a step 250 that defines the top of the cavity 211.\",\\n \"p0042\": \"The porous plug 244 has a t-shape. A t-shaped porous plug provides increased gas flow as compared to porous plugs of other shapes and is easier to install into the cavity 211 than porous plugs of other shapes. The porous plug 244 may include a head 251 and a shaft 252. The head 251 has a diameter 253 and the shaft 252 has a diameter 254. Further, the diameter 253 is larger than the diameter 254. Additionally, the head includes bottom surface 255 which meets the shaft 252. The head 251 further includes surface 256 facing the sidewall 205 of the cavity 211. Further, the shaft 252 includes a surface 257 facing the sidewall 205 of the cavity 211. In various embodiments, the porous plug 244 may be positioned within the cavity 211 using various techniques such as press fitting, slip fitting, clearance fitting, pinning, and bonding, among others. For example, the porous plug 244 may be positioned within the cavity such that the surface 256 of the head 251 is in contact with the sidewall 205 or such that there is a gap between the surface 256 of the head 251 and the sidewall 205.\",\\n \"p0043\": \"The sealing member 245 is disposed adjacent to the porous plug 244. The sealing member 245 forms a seal between the surface 257 of the porous plug 244 and the sidewall 205 of the cavity 211. The sealing member 245 may form at least one of a radial seal between the porous plug 244 and the cavity 211 and an axial seal between the porous plug 244 and the cooling base 104. Further, the sealing member 245 may secure the porous plug 244 within the cavity 211. For example, the sealing member 245 may be coupled to at least one of the porous plug 244 and the sidewall 205 of the cavity 211 using various techniques, such as press fitting, pinning, and bonding, among others. The sealing member 245 may mechanically secure the porous plug 244 to the sidewall 205 of the cavity 211.\",\\n \"p0044\": \"The sealing member 245 may be comprised of a resilient polymeric material, such as an elastomer. Further, the sealing member 245 may be comprised of one or more of a fluoroelastomer material (e.g., a FKM), a perfluoroelastomer material (e.g., a FFKM), and a highly purity ceramic. The highly purity ceramic may be greater than 99% pure and may be a ceramic paste or a solid suspended in solution. Further, the sealing member 245 may be comprised of a material that is erosion resistive to the process gases. For example, erosion resistive materials do not erode in the presence of process gases. Additionally, or alternatively, the material of the sealing member 245 is selected such that the material does not penetrate the porous plug 244. The sealing member 245 may be an O-ring, a cylindrical gasket, or other ring-shaped seal. Alternatively, the sealing member 245 may be formed from a material that is applied in one of a liquid, paste and/or gel and changes state to a substantially solid or gel form. Further, the sealing member 245 may be comprised of a substantially non-adhesive material.\",\\n \"p0045\": \"The bond layer 204 secures the body 206 to the cooling base 104. Further, a gap 204A is formed in the bond layer 204 and is part of the gas flow passage 270. As the material or materials that typically make up the bond layer 204 are susceptible to erosion in the presence of the process gases used during substrate processing, various methods for protecting the bond layer 204 from the process gases have been explored. Advantageously, by employing a sealing member, e.g., the sealing member 245, which is highly erosion resistive to the process gases, the process gas passing through the porous plug 244 may be prevented. Thus, the life of the bond layer 204 is increased. Additionally, the useful service life of the substrate support pedestal 116 is increased.\",\\n \"p0046\": \"FIG. 3 is a schematic cross-section of a portion 201 of the substrate support pedestal 116, according to one or more embodiments. As is described above, the porous plug 244 has the head 251 and the shaft 252, forming the t-shape of the porous plug 244. A t-shaped porous plug may provide a better gas flow than porous plugs of other shapes and may be easier to install into the cavity 211 than porous plugs of other shapes. Further, the porous plug 244 prevents the backside gas from flowing into the gap between the electrostatic chuck 102 and the cooling base 104 and negatively affecting (e.g., eroding) the bond layer 204.\",\\n \"p0047\": \"The porous plug 244 may extend from a first end 302 of the cavity 211 to a second end 304 of the cavity 211. For example, the surface 306 of the porous plug 244 may contact the surface 309 of the cavity, and the surface 308 of the porous plug 244 and the surface 307 of the electrostatic chuck 102 may be coplanar, such that the surface 308 does extend into the gap 305 between the electrostatic chuck 102 and the cooling base 104. Alternatively, the surface 308 may extend into the gap 305 between the electrostatic chuck 102 and the cooling base 104. Further, the surface 308 may be between the surface 309 and the surface 307.\",\\n \"p0048\": \"As is stated above with regard to FIG. 2, the porous plug 244 includes the diameter 253 that is greater than the diameter 332 of the opening 210. Further, the porous plug 244 and the opening 210 are concentric. Additionally, or alternatively, the porous plug 244 and the opening 209 are concentric.\",\\n \"p0049\": \"The cavity 211 includes a chamfered edge 310 formed where the sidewall 205 meet the bottom surface 307 of the electrostatic chuck 102. Further, the porous plug 244 may have a chamfered edge where the surface 306 meets the surface 256. The chamfered edge 310 of the cavity 211 and the chamfered edge 320 of the porous plug 244 aid in the insertion of the porous plug 244 into the cavity 211. Further, the chamfered edge 310 reduces possible damage that may be caused to the sealing member 245 when the sealing member 245 is inserted into the cavity around the porous plug 244, or the sealing member 245 expands during substrate processing.\",\\n \"p0050\": \"The sealing member 245 is adjacent to the porous plug 244. The sealing member 245 forms a radial seal between the porous plug 244 and the cavity 211. For example, the sealing member 245 may contact the surface 257 of the porous plug 244 and the sidewall 205 of the cavity 211, preventing process gases from flowing along the sides of the porous plug 244. Further, the sealing member 245 may secure the porous plug 244 within the cavity 211. For example, the sealing member 245 may exert a force on the sidewall 205 of the cavity 211 and the surface 257 of the porous plug 244 such that the porous plug 244 is held within the cavity 211. Additionally, the sealing member 245 includes surfaces 356 and 357. One or more of the surfaces 356 and 357 may have a substantially curved shape. The substantially curved shape may be convex or concave. Further, one or more of the surfaces 356 and 357 may have a substantially flat shape.\",\\n \"p0051\": \"The sealing member 245 may completely reside within the cavity 211 or the sealing member 245 may at least partially extend into the gap 305 between electrostatic chuck 102 and the cooling base 104. Further, the sealing member 245 may be sized such that the sealing member 245 does not exceed the opening of the cavity 211 defined between the surface 255 of the porous plug 244, the surface 257 of the shaft 252, the surface 307 of the electrostatic chuck 102, and the sidewall 205 of the cavity 211. Additionally, or alternatively, the bonding layer 204 may extend into the gap 305 such that the bonding layer 204 at least partially contacts the sealing member 245.\",\\n \"p0052\": \"FIG. 4 is a schematic cross-section of the portion 201 of the substrate support pedestal 116, having a different sealing member 445. As compared to the sealing member 245 of FIG. 3, the sealing member 445 of FIG. 4 forms a radial seal between the surface 257 of the shaft 252 the sidewall 205 of the cavity 211 and an axial seal between the surface 255 of the porous plug 244 and a surface 404 of the cooling base 104. For example, the sealing member 245 may contact the surface 257 and the surface 255 of the porous plug 244, the sidewall 205 of the cavity 211 and the surface 404 of the cooling base 104. The sealing member 445 is positioned adjacent to the porous plug 244. For example, the sealing member 445 is positioned between the porous plug 244 and the sidewall of the cavity 211. Further, the sealing member is positioned between the porous plug 244 and the cooling base 104. Additionally, the sealing member 445 may be formed similar to that of the sealing member 245. For example, the sealing member 445 may be an O-ring, a cylindrical gasket, or other ring-shaped seal. Further, the sealing member 245 may be formed from a material that is erosion resistive in the presence of the process gases used during substrate processing as are described above with regard to the sealing member 245. Additionally, the sealing member 445 includes surfaces 456 and 457. One or more of the surfaces 456 and 457 may have a substantially curved shape. The substantially curved shape may be convex or concave. Further, one or more of the surfaces 456 and 457 may have a substantially flat shape. Further, the bonding layer 204 may at least partially contact the sealing member 445.\",\\n \"p0053\": \"FIG. 5 is a schematic cross-section of the portion 201 of the substrate support pedestal 116, having a different sealing member 545 and porous plug 544. The porous plug 544 is configured similar to that of the porous plug 244 of FIGS. 2 and 3, however, the instead of comprising a t-shape, the porous plug 544 comprises a cylindrical shape. The sealing member 545 is positioned adjacent to the porous plug 544. For example, the sealing member 545 is positioned between the porous plug 544 and the sidewall of the cavity 211. Further, the sealing member may be positioned between the surface 309 of the cavity 211 and the cooling base 104. The porous plug 544 has diameter 530, top surface 506, bottom surface 508 and surface 550. The top surface 506 contacts the surface 309 of the cavity 211. Further, the surface 508 may be recessed within the cavity 211, coplanar with surface 307 of the electrostatic chuck 102, or extend into the gap 305 formed between the surface 307 of the electrostatic chuck and the surface 404 of the cooling base 104. The diameter 530 of the porous plug 544 is greater than the diameter 532 of the opening 210.\",\\n \"p0054\": \"The sealing member 545 may be formed similar to that of the sealing member 245. For example, the sealing member 545 may be an O-ring, a cylindrical gasket, or other ring-shaped seal. Further, the sealing member 545 may be formed from a material that is erosion resistive in the presence of the process gases used during substrate processing as are described above with regard to the sealing member 245. The sealing member 545 forms a radial seal between the surface 550 of the porous plug 544 and the sidewall 205 of the cavity 211. For example, the sealing member 545 contacts the surface 550 of the porous plug 544 and the sidewall 205 of the cavity 211, such as the sealing member 445 illustrated in FIG. 4. Additionally, the sealing member 545 may form an axial seal between the surface 309 of the cavity 211 and the surface 404 of the cooling base 104. For example, the sealing member 545 may contact the surface 309 of the cavity 211 and contact the surface 404 of the cooling base 104. The sealing member 545 includes surfaces 556 and 557. One or more of the surfaces 556 and 557 may have a substantially curved shape. The substantially curved shape may be convex or concave. One or more of the surfaces 556 and 557 may have a substantially flat shape. Further, the bonding layer 204 may protrude into the gap 305 such that the bonding layer 204 at least partially contacts the sealing member 545.\",\\n \"p0055\": \"FIG. 6 is a schematic cross-section of the portion 201 of the substrate support pedestal 116 having a different sealing member 645, according to one or more embodiments. As compared to the sealing member 245 of FIG. 3, the sealing member 645 of FIG. 6 is formed from a material applied in a liquid, paste or gel form, that changes state to a substantially solid or gel form. For example, the sealing member 645 may be formed from one of a fluoroelastomer material, a perfluoroelastomer material, and a high purity ceramic potting material, among others, that can be flowed or otherwise disposed in the cavity 211 around the porous plug 244 in a liquid or viscous state, which changes state to a more solid and substantially immobile form. The sealing member 645 is disposed adjacent to the porous plug 244 such that the material is disposed between the surface 257 and the surface 255 of the porous plug 244 and the sidewall 205 of the cavity 2(...)\"\\n }\\n },\\n \"US9767993\": {\\n \"Patent Num\": \"US9767993\",\\n \"Content\": {\\n \"title\": \"Plasma processing apparatus\",\\n \"pa01\": \"This microwave plasma processing apparatus has, as a gas introduction mechanism for introducing a working gas inside a chamber (10), electrical discharge prevention members (96(1) to 96(8)), each of which is provided to a plurality of dielectric window gas passages (94(1) to (94(8)) through which a dielectric window (54) passes. Each electrical discharge prevention member (96(n)), a portion (114) of which protrudes only a height h, which is greater than or equal to a predetermined distance H, upward from the rear surface of a dielectric window (52) on the inlet side, passes through an opening (54a) of a slot plate (54), and inserts into a branched gas supply path (92(n)) of a gas branch part (90). The gas branch part (90), spring coils (116) and the slot plate (54), which surround the protruding portion (114) of each electrical discharge prevention member (96(n)), constitute an enclosing conductor (118).\",\\n \"c-en-0001\": \"A plasma processing apparatus, comprising:\\\\n a processing container;\\\\n a substrate holding unit configured to hold a substrate in the processing container;\\\\n a coaxial waveguide and a dielectric window for introducing a microwave over the substrate holding unit;\\\\n a dielectric window gas flow path that penetrates the dielectric window;\\\\n a processing gas supply unit including an external gas supply path connected to the dielectric window gas flow path from above or a side of the dielectric window, the processing gas supply unit being configured to supply at least a part of a required processing gas into the processing container through the external gas supply path and the dielectric window gas flow path;\\\\n an electromagnetic wave supply unit configured to supply electromagnetic waves into the processing container through the dielectric window;\\\\n an electric discharge prevention member integrally formed in or coupled to the dielectric window, including an inlet connected to an outlet of the external gas supply path, and configured to form a portion or whole of the dielectric window gas flow path, an inlet side portion of the electric discharge prevention member protruding from a surface of the dielectric window by at least a predetermined distance H; and\\\\n a surrounding conductor including a connector unit, the surrounding conductor configured to surround the inlet side portion of the electric discharge prevention member, the connector unit connected to a lower end of an inner conductor of the coaxial waveguide;\\\\n wherein the predetermined distance H is determined by a wavelength of the electromagnetic waves and a size of the surrounding conductor in a radial direction, and further wherein the electric discharge prevention member is air permeable and the processing gas passes through the electric discharge prevention member.\",\\n \"c-en-0002\": \"The plasma processing apparatus of claim 1, wherein, assuming that a wavelength the electromagnetic waves is λd when the electromagnetic waves are propagated within the electric discharge prevention member, H≧0.05λd.\",\\n \"c-en-0003\": \"The plasma processing apparatus of claim 2, wherein H≦0.3λd.\",\\n \"c-en-0004\": \"The plasma processing apparatus of claim 1, wherein, assuming that an inner diameter of the surrounding conductor or a length of a major axis of a maximum inscribed ellipse of the surrounding conductor is D, H≧0.13D.\",\\n \"c-en-0005\": \"The plasma processing apparatus of claim 4, wherein H≧0.5D.\",\\n \"c-en-0006\": \"The plasma processing apparatus of claim 1, wherein, assuming that the wavelength of the electromagnetic waves is λd when the electromagnetic waves are propagated within the electric discharge prevention member and an inner diameter of the surrounding conductor or a length of a major axis of a maximum inscribed ellipse of the surrounding conductor is D, D≦0.6λd.\",\\n \"c-en-0007\": \"The plasma processing apparatus of claim 1, wherein a plurality of dielectric window gas flow paths are provided in the dielectric window in parallel to each other.\",\\n \"c-en-0008\": \"The plasma processing apparatus of claim 7, wherein, assuming that a distance between a center of the dielectric window and each of the dielectric window gas flow paths is R and the wavelength of the electromagnetic waves is λg when the electromagnetic waves are propagated within the dielectric window, λg/4